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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/43795
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dc.creatorRafael Silva Alencarpt_BR
dc.creatorLuiz Gustavo de Oliveira Lopes Cançadopt_BR
dc.creatorAdo Jorio de Vasconcelospt_BR
dc.creatorCassiano Rabelo e Silvapt_BR
dc.creatorHudson Luiz Silva de Mirandapt_BR
dc.creatorThiago de Lourenço e Vasconcelospt_BR
dc.creatorBruno Santos de Oliveirapt_BR
dc.creatorAroldo Ribeiro Lopes Netopt_BR
dc.creatorBruno Carvalho Públiopt_BR
dc.creatorJenaina Ribeiro Soarespt_BR
dc.creatorAntônio Gomes Souza Filhopt_BR
dc.date.accessioned2022-07-29T15:29:18Z-
dc.date.available2022-07-29T15:29:18Z-
dc.date.issued2019-
dc.citation.volume19pt_BR
dc.citation.issue10pt_BR
dc.citation.spage7357pt_BR
dc.citation.epage7364pt_BR
dc.identifier.doihttp://doi.org/10.1021/acs.nanolett.9b02974pt_BR
dc.identifier.issn15306992pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/43795-
dc.description.resumoThe knowledge of the phonon coherence length is of great importance for two-dimensional-based materials since phonons can limit the lifetime of charge carriers and heat dissipation. Here we use tip-enhanced Raman spectroscopy (TERS) to measure the spatial correlation length Lc of the A11g and A2 1g phonons of monolayer and few-layer gallium sulfide (GaS). The differences in Lc values are responsible for different enhancements of the A1g modes, with A11 g always enhancing more than the A21g, independently of the number of GaS layers. For five layers, the results show an Lc of 64 and 47 nm for A11g and A21g, respectively, and the coherence lengths decrease when decreasing the number of layers, indicating that scattering with the surface roughness plays an important role.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetospt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICApt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofNano Letterspt_BR
dc.rightsAcesso Restritopt_BR
dc.subjectTERSpt_BR
dc.subjectGaSpt_BR
dc.subjectNanomateriaispt_BR
dc.subjectTip-Enhanced Raman Spectroscopypt_BR
dc.subjectPhonon coherence lengthpt_BR
dc.subjectSpatial correlation lengthpt_BR
dc.subject.otherFônonspt_BR
dc.subject.otherNanomateriaispt_BR
dc.subject.otherEspectroscopia de Ramanpt_BR
dc.titleProbing spatial phonon correlation length in post-transition metal monochalcogenide GaS using Tip-Enhanced Raman Spectroscopypt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://pubs.acs.org/doi/10.1021/acs.nanolett.9b02974pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-9992-7564pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0816-0888pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5978-2735pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0488-2242pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-9946-5224pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0195-444Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0214-867Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9248-2243pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3802-1168pt_BR
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