Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/44021
Type: Artigo de Evento
Title: Observation of moiré superlattices on twisted bilayer graphene by scanning microwave impedance microscopy
Authors: Douglas August Alexander Ohlberg
Cássio Gonçalves do Rego
Ado Jorio de Vasconcelos
Gilberto Medeiros Ribeiro
Andreij de Carvalho Gadelha
Diego Camilo Tami López
Eliel Gomes da Silva Neto
Daniel A. Miranda
Jéssica Santos Lemos
Fabiano Costa Santana
Leonardo Cristiano Campos
Jhonattan Córdoba Ramírez
Abstract: In the emerging field of twistronics, new electronic devices based on bilayer graphene have shown distinct electronic properties that depend on the rotational misalignment of one crystalline layer with respect to another. Given present methods of preparing these bilayers, there is always some uncertainty in the actual versus targeted twist angle of a specific bilayer that can only be resolved by measuring the moiré patterns that are unique to a specific twist angle. Traditional methods enabling such a measurement, Transmission Electron Microscopy and Scanning Tunneling Microscopy, impose serious restrictions on the types of substrates supporting the bilayers, which, in turn, constrains the subsequent fabrication of any devices. We report here a new, non-destructive method to measure moiré patterns of bilayer graphene deposited on any smooth substrate, using the scanning probe technique known as scanning microwave impedance microscopy (sMIM) which enables the simultaneous generation of localized topography, capacitance and conductance images with nanometer scale resolution1. Moiré patterns were observed in samples prepared on various substrates with twist angles ranging from 0.02 to 6.7 degrees, beyond which the moiré patterns are too small to be resolved by the sMIM probes. We present some possible reasons for the various contrast mechanisms. Addressing the problem of variations across a bilayer surface due to localized moiré distortions that result from the tensile and shear forces involved in transferring a twisted bilayer to a substrate, we demonstrate how sMIM can precisely map the twist angle distribution across the film, and enable direct device and circuit routing.
Subject: Grafeno
Microscopia
language: eng
metadata.dc.publisher.country: Brasil
Publisher: Universidade Federal de Minas Gerais
Publisher Initials: UFMG
metadata.dc.publisher.department: ENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICA
ICX - DEPARTAMENTO DE CIÊNCIA DA COMPUTAÇÃO
ICX - DEPARTAMENTO DE FÍSICA
Rights: Acesso Restrito
metadata.dc.identifier.doi: https://doi.org/10.1117/12.2570651
URI: http://hdl.handle.net/1843/44021
Issue Date: 2020
metadata.dc.url.externa: https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11465/114650J/Observation-of-moir%C3%A9-superlattices-on-twisted-bilayer-graphene-by-scanning/10.1117/12.2570651.full?webSyncID=026d873b-139a-c658-4444-37c22323c473&sessionGUID=7981396&SSO=1
metadata.dc.relation.ispartof: SPIE Nanoscience + Engineering
Appears in Collections:Artigo de Evento

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