Use este identificador para citar o ir al link de este elemento: http://hdl.handle.net/1843/51291
Tipo: Artigo de Periódico
Título: Formation of BixSey phases upon annealing of the topological insulator Bi2Se3: stabilization of in-depth bismuth bilayers
Autor(es): Pedro Henrique Rezende Gonçalves
Thaís Chagas Peixoto Silva
Von Braun Nascimento
Diogo Duarte dos Reis
Carolina Parra Gonzalez
Mário Sérgio de Carvalho Mazzoni
Ângelo Malachias de Souza
Rogério Magalhães Paniago
Resumen: The goal of this work is to study transformations that occur upon heating Bi2Se3 to temperatures up to 623 K. X-ray diffraction (XRD) and scanning tunneling microscopy (STM) and spectroscopy (STS) techniques were used in our investigation. XRD was measured following the 00L and 01L truncation rods. These measurements revealed that upon heating there is a coexistence of a major Bi2Se3 phase and other ones that present structures of quintuple-layers intercalated with Bismuth bilayers. STM measurements of the surface of this material showed the presence of large hexagonal BixSey domains embedded in a Bi2Se3 matrix. STS experiments were employed to map the local electronic density of states and characterize the modifications imposed by the presence of the additional phases. Finally, density functional theory (DFT) calculations were performed to support these findings.
Asunto: Difração
Raios X
Microscopia de tunelamento de elétrons
Teoria do funcional da densidade
Idioma: eng
País: Brasil
Editor: Universidade Federal de Minas Gerais
Sigla da Institución: UFMG
Departamento: ICX - DEPARTAMENTO DE FÍSICA
Tipo de acceso: Acesso Restrito
Identificador DOI: https://doi.org/10.1021/acs.jpclett.7b03172
URI: http://hdl.handle.net/1843/51291
Fecha del documento: 2018
metadata.dc.url.externa: https://pubs.acs.org/doi/10.1021/acs.jpclett.7b03172
metadata.dc.relation.ispartof: The Journal of Physical Chemistry Letters
Aparece en las colecciones:Artigo de Periódico

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