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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/51291
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dc.creatorPedro Henrique Rezende Gonçalvespt_BR
dc.creatorThaís Chagas Peixoto Silvapt_BR
dc.creatorVon Braun Nascimentopt_BR
dc.creatorDiogo Duarte dos Reispt_BR
dc.creatorCarolina Parra Gonzalezpt_BR
dc.creatorMário Sérgio de Carvalho Mazzonipt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorRogério Magalhães Paniagopt_BR
dc.date.accessioned2023-03-28T18:42:47Z-
dc.date.available2023-03-28T18:42:47Z-
dc.date.issued2018-
dc.citation.volume9pt_BR
dc.citation.spage954pt_BR
dc.citation.epage960pt_BR
dc.identifier.doihttps://doi.org/10.1021/acs.jpclett.7b03172pt_BR
dc.identifier.issn1948-7185pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/51291-
dc.description.resumoThe goal of this work is to study transformations that occur upon heating Bi2Se3 to temperatures up to 623 K. X-ray diffraction (XRD) and scanning tunneling microscopy (STM) and spectroscopy (STS) techniques were used in our investigation. XRD was measured following the 00L and 01L truncation rods. These measurements revealed that upon heating there is a coexistence of a major Bi2Se3 phase and other ones that present structures of quintuple-layers intercalated with Bismuth bilayers. STM measurements of the surface of this material showed the presence of large hexagonal BixSey domains embedded in a Bi2Se3 matrix. STS experiments were employed to map the local electronic density of states and characterize the modifications imposed by the presence of the additional phases. Finally, density functional theory (DFT) calculations were performed to support these findings.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofThe Journal of Physical Chemistry Letters-
dc.rightsAcesso Restritopt_BR
dc.subjectX-ray diffractionpt_BR
dc.subjectScanning tunneling microscopypt_BR
dc.subjectDensity functional theorypt_BR
dc.subject.otherDifraçãopt_BR
dc.subject.otherRaios Xpt_BR
dc.subject.otherMicroscopia de tunelamento de elétronspt_BR
dc.subject.otherTeoria do funcional da densidadept_BR
dc.titleFormation of BixSey phases upon annealing of the topological insulator Bi2Se3: stabilization of in-depth bismuth bilayerspt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://pubs.acs.org/doi/10.1021/acs.jpclett.7b03172pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6773-8921pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5688-5985pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0027-6261pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1151-7745pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-2710-462Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5203-0944pt_BR
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