Use este identificador para citar o ir al link de este elemento: http://hdl.handle.net/1843/54104
Tipo: Artigo de Periódico
Título: Oxygen intercalated graphene on SiC(0001): multiphase SiOx layer formation and its influence on graphene electronic properties
Autor(es): Igor de Souza Lana Antoniazzi
Rogério Magalhães Paniago
Myriano Henriques de Oliveira Junior
Thais Chagas Peixoto Silva
Matheus Josué de Souza Matos
Lucas Atila Bernardes Marçal
Edmar Avellar Soares
Mário Sérgio de Carvalho Mazzoni
Roberto Hiroki Miwa
João Marcelo Jordão Lopes
Ângelo Malachias de Souza
Resumen: Low-dimensionality materials are highly susceptible to interfaces. Indeed, intercalation of different chemical species in between epitaxial graphene and silicon carbide (SiC), for instance, may decouple the graphene with respect to the substrate due to the conversion of the buffer layer into a graphene layer. Ointercalation is known to release the strain of such 2D material and to lead to the formation of high structural quality AB-stacked bilayer graphene. Nonetheless, this interface transformation concomitantly degrades graphene electronic transport properties. In this work we employed different techniques in order to better understand the structure of the graphene/SiC interface generated by O-intercalation and to elucidate the origin of the poor electronic properties of graphene. Experimental results revealed the formation of a SiO2 rich layer with a defective transition layer in between it and the SiC, which is characterized by the existence of silicon oxycarbide structures. Scanning tunneling spectroscopy measurements revealed an extensive presence of electronic states just around the Fermi level all over the sample surface, which may suppress the charge carriers mobility around this region. According to theoretical calculations, such states are mainly due to the formation of silicon oxicarbides within the interfacial layer.
Asunto: Oxigênio
Grafeno
Idioma: eng
País: Brasil
Editor: Universidade Federal de Minas Gerais
Sigla da Institución: UFMG
Departamento: ICX - DEPARTAMENTO DE FÍSICA
Tipo de acceso: Acesso Restrito
Identificador DOI: https://doi.org/10.1016/j.carbon.2020.05.064
URI: http://hdl.handle.net/1843/54104
Fecha del documento: 2020
metadata.dc.url.externa: https://www.sciencedirect.com/science/article/pii/S0008622320305054
metadata.dc.relation.ispartof: Carbon
Aparece en las colecciones:Artigo de Periódico

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