Use este identificador para citar o ir al link de este elemento: http://hdl.handle.net/1843/62216
Tipo: Artigo de Periódico
Título: Electronic and spin–orbit properties of the kagome MOF family M3(1,2,5,6,9, 10-triphenylenehexathiol)2 (M  =  Ni, Pt, Cu and Au)
Autor(es): Orlando José Silveira Júnior
Helio Chacham
Resumen: We investigate, through first-principles calculations, the electronic band structure—including the spin–orbit coupling—of single-layer M3(THT)2 metal-organic frameworks, where M  =  Ni, Pt, Cu and Au, and THT is the 1,2,5,6,9,10-triphenylenehexathiol molecule. This MOF family contains, in its electronic structure, spin–orbit gaps that could allow their use in quantum spin Hall effect devices. We find that the partial inclusion of exact exchange in the calculations (beyond a semi-local exchange-correlation level) leads to quantitative, and even qualitative, modifications of the electronic structure of Ni3(THT)2 and Pt3(THT)2 relative to calculations at semi-local exchange-correlation level: upon inclusion of exact exchange, the predicted fundamental band gap of these semiconductor materials increases to more than twice, and the predicted spin–orbit gaps change by as much as 44%. Even the qualitative description of the valence bands of these materials changes upon inclusion of exact exchange. We also find that the magnitudes of the spin–orbit gaps are not monotonic with the atomic number of the metal atom.
Asunto: Propriedades eletrônicas
Semicondutores
Idioma: eng
País: Brasil
Editor: Universidade Federal de Minas Gerais
Sigla da Institución: UFMG
Departamento: ICX - DEPARTAMENTO DE FÍSICA
Tipo de acceso: Acesso Restrito
Identificador DOI: https://doi.org/10.1088/1361-648X/aa530e
URI: http://hdl.handle.net/1843/62216
Fecha del documento: 2017
metadata.dc.url.externa: https://iopscience.iop.org/article/10.1088/1361-648X/aa530e
metadata.dc.relation.ispartof: Journal of Physics: Condensed Matter
Aparece en las colecciones:Artigo de Periódico

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