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Use este identificador para citar o ir al link de este elemento: http://hdl.handle.net/1843/62218
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Campo DCValorIdioma
dc.creatorAna Paula Moreira Barbozapt_BR
dc.creatorAlan Custodio dos Reis Souzapt_BR
dc.creatorMatheus Josué de Souza Matospt_BR
dc.creatorJuliana Caldeira Brantpt_BR
dc.creatorTiago Campolina Barbosapt_BR
dc.creatorHelio Chachampt_BR
dc.creatorMario Sergio de Carvalho Mazzonipt_BR
dc.creatorBernardo Ruegger Almeida Nevespt_BR
dc.date.accessioned2024-01-01T12:33:21Z-
dc.date.available2024-01-01T12:33:21Z-
dc.date.issued2019-
dc.citation.volume155pt_BR
dc.citation.spage108pt_BR
dc.citation.epage113pt_BR
dc.identifier.doihttps://doi.org/10.1016/j.carbon.2019.08.054pt_BR
dc.identifier.issn1873-3891pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/62218-
dc.description.resumoScanning probe microscopy and ab initio calculations reveal modifications on the electronic and structural properties of graphene/h-BN heterostructures induced by compression. Using AFM and EFM techniques, with charge injection being made in the heterostructures at different pressures, the charge injection efficiency monotonically decreases with increasing pressure for monolayer-graphene (MLG)þ BN heterostructures, indicative of a conductor-insulator electronic transition. Bilayer-graphene (BLG)þ BN and trilayer-graphene (TLG)þBN heterostructures show a non-monotonic behavior of charge injection versus pressure, indicative of competing electronic structure modifications. First-principle calculations of these systems indicate a pressure-induced van der Waals-to-covalent interlayer transition, where such interlayer covalent binding, in the presence of water molecules, results in a disordered insulating structure for the MLG þ BN case, while it leads to an ordered conducting structure for both BLG þ BN and TLG þ BN heterostructures. These opposing effects may have a strong influence on graphene/h-BN-based electronic devices and their physics under pressurized environments.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofCarbon-
dc.rightsAcesso Restritopt_BR
dc.subjectGraphenept_BR
dc.subjectHeterostructurespt_BR
dc.subjectVan der Waalspt_BR
dc.subject.otherGrafenopt_BR
dc.subject.otherHeteroestruturapt_BR
dc.titleGraphene/h-BN heterostructures under pressure: from van der Waals to covalentpt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://www.sciencedirect.com/science/article/pii/S0008622319308632pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1807-971Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8395-9465pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0398-3992pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8931-3403pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6303-4222pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5041-9094pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5897-6936pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0464-4754pt_BR
Aparece en las colecciones:Artigo de Periódico

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