Use este identificador para citar ou linkar para este item: http://hdl.handle.net/1843/64385
Tipo: Artigo de Periódico
Título: Passivation of interfaces in thin film solar cells: understanding the effects of a nanostructured rear point contact layer
Autor(es): Pedro M. P. Salomé
Elvira Maria Correia Fortunato
Rodrigo Ferrão de Paiva Martins
Juan Carlos González Pérez
Joaquim Fernando Monteiro de Carvalho Pratas Leitão
Paulo A. Fernandes
Marika Edoff
Sascha Sadewasser
Bart Vermang
Rodrigo Ribeiro de Andrade
Jennifer Cláudia Passos Teixeira
José Miguel Vaz da Cunha
Manuel João de Moura Dias Mendes
Sirazul Haque
Jêrome Borme
Hugo Manuel Brito Águas
Resumo: Thin film solar cells based in Cu(In,Ga)Se2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.
Assunto: Células solares
Filmes finos
Idioma: eng
País: Brasil
Editor: Universidade Federal de Minas Gerais
Sigla da Instituição: UFMG
Departamento: ICX - DEPARTAMENTO DE FÍSICA
Tipo de Acesso: Acesso Restrito
Identificador DOI: https://doi.org/10.1002/admi.201701101
URI: http://hdl.handle.net/1843/64385
Data do documento: 2018
metadata.dc.url.externa: https://onlinelibrary.wiley.com/doi/full/10.1002/admi.201701101
metadata.dc.relation.ispartof: Advanced Materials Interfaces
Aparece nas coleções:Artigo de Periódico

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