1. Repositório Institucional da UFMG
  2. Publicações Científicas e Culturais
  3. Artigo de Evento
Use este identificador para citar o ir al link de este elemento: http://hdl.handle.net/1843/44021
Registro completo de metadatos
Campo DCValorIdioma
dc.creatorDouglas August Alexander Ohlbergpt_BR
dc.creatorCássio Gonçalves do Regopt_BR
dc.creatorAdo Jorio de Vasconcelospt_BR
dc.creatorGilberto Medeiros Ribeiropt_BR
dc.creatorAndreij de Carvalho Gadelhapt_BR
dc.creatorDiego Camilo Tami Lópezpt_BR
dc.creatorEliel Gomes da Silva Netopt_BR
dc.creatorDaniel A. Mirandapt_BR
dc.creatorJéssica Santos Lemospt_BR
dc.creatorFabiano Costa Santanapt_BR
dc.creatorLeonardo Cristiano Campospt_BR
dc.creatorJhonattan Córdoba Ramírezpt_BR
dc.date.accessioned2022-08-08T11:55:38Z-
dc.date.available2022-08-08T11:55:38Z-
dc.date.issued2020-
dc.citation.spage1pt_BR
dc.citation.epage7pt_BR
dc.identifier.doihttps://doi.org/10.1117/12.2570651pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/44021-
dc.description.resumoIn the emerging field of twistronics, new electronic devices based on bilayer graphene have shown distinct electronic properties that depend on the rotational misalignment of one crystalline layer with respect to another. Given present methods of preparing these bilayers, there is always some uncertainty in the actual versus targeted twist angle of a specific bilayer that can only be resolved by measuring the moiré patterns that are unique to a specific twist angle. Traditional methods enabling such a measurement, Transmission Electron Microscopy and Scanning Tunneling Microscopy, impose serious restrictions on the types of substrates supporting the bilayers, which, in turn, constrains the subsequent fabrication of any devices. We report here a new, non-destructive method to measure moiré patterns of bilayer graphene deposited on any smooth substrate, using the scanning probe technique known as scanning microwave impedance microscopy (sMIM) which enables the simultaneous generation of localized topography, capacitance and conductance images with nanometer scale resolution1. Moiré patterns were observed in samples prepared on various substrates with twist angles ranging from 0.02 to 6.7 degrees, beyond which the moiré patterns are too small to be resolved by the sMIM probes. We present some possible reasons for the various contrast mechanisms. Addressing the problem of variations across a bilayer surface due to localized moiré distortions that result from the tensile and shear forces involved in transferring a twisted bilayer to a substrate, we demonstrate how sMIM can precisely map the twist angle distribution across the film, and enable direct device and circuit routing.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetospt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICApt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE CIÊNCIA DA COMPUTAÇÃOpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofSPIE Nanoscience + Engineeringpt_BR
dc.rightsAcesso Restritopt_BR
dc.subjectMicrowave impedance microscopypt_BR
dc.subjectBilayer graphenept_BR
dc.subjectMoiré patternpt_BR
dc.subjectMicroscopypt_BR
dc.subject.otherGrafenopt_BR
dc.subject.otherMicroscopiapt_BR
dc.titleObservation of moiré superlattices on twisted bilayer graphene by scanning microwave impedance microscopypt_BR
dc.typeArtigo de Eventopt_BR
dc.url.externahttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/11465/114650J/Observation-of-moir%C3%A9-superlattices-on-twisted-bilayer-graphene-by-scanning/10.1117/12.2570651.full?webSyncID=026d873b-139a-c658-4444-37c22323c473&sessionGUID=7981396&SSO=1pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1634-0264pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0388-8688pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5978-2735pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5309-2488pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-6350-7680pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1239-3222pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-4658-3243pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6792-7554pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8883-4223pt_BR
Aparece en las colecciones:Artigo de Evento

archivos asociados a este elemento:
no existem archivos asociados a este elemento.
Mostrar registro simple del elemento Visualizar estadísticas


Los elementos en el repositorio están protegidos por copyright, con todos los derechos reservados, salvo cuando es indicado lo contrario.