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Use este identificador para citar o ir al link de este elemento: http://hdl.handle.net/1843/51132
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Campo DCValorIdioma
dc.creatorLígia Parreira de Souzapt_BR
dc.creatorRodrigo Otávio Gonçalves Chavespt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorRoberto Magalhães Paniagopt_BR
dc.creatorSukarno Olavo Ferreirapt_BR
dc.creatorAndre Santarosa Ferlautopt_BR
dc.date.accessioned2023-03-22T18:17:58Z-
dc.date.available2023-03-22T18:17:58Z-
dc.date.issued2016-
dc.citation.volume119pt_BR
dc.citation.issue24pt_BR
dc.citation.spage245104-1pt_BR
dc.citation.epage245104-13pt_BR
dc.identifier.doihttp://dx.doi.org/10.1063/1.4954315pt_BR
dc.identifier.issn1089-7550pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/51132-
dc.description.resumoHematite (α-Fe2O3) thin films were prepared by sol-gel route and investigated for application in H2 generation by photo-assisted water splitting. The photoelectrochemical (PEC) performance was shown to increase significantly for films deposited on SnO2:F/glass subjected to high temperature (T) annealing (>750 °C). Strong correlation was found between photogenerated current, donor concentration, and Sn concentration as determined by Mott-Schottky analysis and X-ray photoelectron spectroscopy. The effects of thermal annealing and Sn addition in the resulting microstructure and optical properties of hematite films deposited on fused silica substrates were determined by a combination of structural characterization techniques and spectroscopic ellipsometry. Thermal annealing (>600 °C) induces a higher optical absorption that is associated directly to film densification and grain growth; however, it promotes no changes in the energy positions of the main Fe2O3 electronic transitions. The band gap energy was found to be 2.21 eV and independent of microstructure and of Sn concentration for all studied films. On the other hand, Sn can be incorporated in the Fe2O3 lattice for concentration up to Sn/Fe ∼2%, leading to an increase in energy split of the main absorption peak, attributed to a distortion of the Fe2O3 lattice. For higher concentrations, Sn incorporation leads to a reduction in absorption, associated with higher porosity and the formation of a secondary Sn-rich phase. In summary, the variation in the optical properties induced by thermal annealing and Sn addition cannot account for the order of magnitude increase of the current density generated by photoanodes annealed at high T (>750 °C); thus, it is concluded that the major contribution for the enhanced PEC performance comes from improved electronic properties induced by the n-type doping caused by Sn diffusion from the SnO2:F substrate.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofJournal of Applied Physics-
dc.rightsAcesso Restritopt_BR
dc.subjectHematite thin filmspt_BR
dc.subjectSpectroscopypt_BR
dc.subject.otherHematitapt_BR
dc.subject.otherFilmes finospt_BR
dc.subject.otherAnálise espectralpt_BR
dc.titleInfluence of annealing temperature and Sn doping on the optical properties of hematite thin films determined by spectroscopic ellipsometrypt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://aip.scitation.org/doi/10.1063/1.4954315pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0540-7163pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-8174-0200pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3056-7289pt_BR
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