1. Repositório Institucional da UFMG
  2. Publicações Científicas e Culturais
  3. Artigo de Periódico
Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/43968
Full metadata record
DC FieldValueLanguage
dc.creatorRafael Silva Alencarpt_BR
dc.creatorRaphael Longuinhos Monteiro Lobatopt_BR
dc.creatorCassiano Rabelo e Silvapt_BR
dc.creatorHudson Luiz Silva de Mirandapt_BR
dc.creatorBartolomeu Cruz Viana Netopt_BR
dc.creatorAntonio Gomes de Souza Filhopt_BR
dc.creatorLuiz Gustavo de Oliveira Lopes Cançadopt_BR
dc.creatorAdo Jorio de Vasconcelospt_BR
dc.creatorJenaina Ribeiro Soarespt_BR
dc.date.accessioned2022-08-04T12:39:56Z-
dc.date.available2022-08-04T12:39:56Z-
dc.date.issued2020-10-16-
dc.citation.volume102pt_BR
dc.citation.issue16pt_BR
dc.citation.spage165307-1pt_BR
dc.citation.epage165307-10pt_BR
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.102.165307pt_BR
dc.identifier.issn24699969pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/43968-
dc.description.resumoGroup-III post-transition-metal monochalcogenides like gallium sulfide (GaS) are layered semiconductors with weakly interacting adjacent layers, which allow them to be reduced to the two-dimensional nanometric thickness level by different exfoliation approaches, similar to graphene. Here, we investigate the intensity polarization dependence of the Raman modes for a different number of GaS layers and use symmetry analysis and density-functional perturbation theory to provide further information on these structures. The Raman polarization-dependent behaviors of the bulk relative modes A1g and E2g were found to be independent of the number of layers, being proportional to cos2(θ) for A1g modes and constant for E2g modes. The computational calculations for two and three layers show Raman active modes emerging at Raman shifts near the bulk Raman modes, with A1g (A1 ) and Eg (E) symmetries for an even (odd) number of layers, some of them being observed as “shoulders” in the experimental Raman spectra. These phonon modes present Raman tensors with components similar to those observed in bulk, thus explaining the same polar dependencies for different GaS thicknesses. The Raman intensity calculations were made by implementing the specific experimental geometry used here, thus resulting in good qualitative agreement. These results are fundamental for the understanding of the structural and vibrational changes when GaS is reduced to the few-layer limit, layer-number differentiation, and for further symmetry-lowering studies by strain manipulation or substrate interaction, which are routine issues in both fundamental research and device fabrication.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetospt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.description.sponsorshipOutra Agênciapt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICApt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofPhysical Review Bpt_BR
dc.rightsAcesso Restritopt_BR
dc.subjectRaman spectroscopy polarizationpt_BR
dc.subjectGallium sulfidept_BR
dc.subjectCrystal structurept_BR
dc.subjectCrystal simmetrypt_BR
dc.subjectOptical phononspt_BR
dc.subject.otherEspectroscopia de Ramanpt_BR
dc.subject.otherGáliopt_BR
dc.subject.otherCrystal structurespt_BR
dc.subject.otherPhononspt_BR
dc.titleRaman spectroscopy polarization dependence analysis in two-dimensional gallium sulfidept_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.165307pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-9992-7564pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1615-4672pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0488-2242pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-9946-5224pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5207-4269pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3802-1168pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0816-0888pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5978-2735pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9248-2243pt_BR
Appears in Collections:Artigo de Periódico

Files in This Item:
There are no files associated with this item.
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.