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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/50789
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dc.creatorShelley A. Scottpt_BR
dc.creatorMax G. Lagallypt_BR
dc.creatorChristoph Friedrich Denekept_BR
dc.creatorDeborah M. Paskiewiczpt_BR
dc.creatorHyuk Ju Ryupt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorStefan Baunackpt_BR
dc.creatorOliver G. Schmidtpt_BR
dc.creatorDonald E. Savagept_BR
dc.creatorMark A. Erikssonpt_BR
dc.date.accessioned2023-03-10T13:15:48Z-
dc.date.available2023-03-10T13:15:48Z-
dc.date.issued2017-
dc.citation.volume9pt_BR
dc.citation.issue48pt_BR
dc.citation.spage42372pt_BR
dc.citation.epage42382pt_BR
dc.identifier.doihttps://doi.org/10.1021/acsami.7b14291pt_BR
dc.identifier.issn1944-8252pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/50789-
dc.description.resumoMethods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPESP - Fundação de Amparo à Pesquisa do Estado de São Paulopt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.rightsAcesso Restritopt_BR
dc.subjectEpitaxypt_BR
dc.subjectSelective growthpt_BR
dc.subjectHybrid crystalline materialspt_BR
dc.subjectSilicon nanomembranespt_BR
dc.subjectInterfacespt_BR
dc.subjectStrain engineeringpt_BR
dc.subject.otherEpitaxiapt_BR
dc.subject.otherNanomembranaspt_BR
dc.subject.otherInterfaces (Ciências fisicas)pt_BR
dc.titleSilicon nanomembranes with hybrid crystal orientations and strain statespt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://pubs.acs.org/doi/10.1021/acsami.7b14291pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1263-011Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8556-386Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-6628-0696pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9503-8367pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-8515-4196pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-3130-9735pt_BR
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