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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/51084
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dc.creatorGilberto Rodrigues da Silva Juniorpt_BR
dc.creatorLucas Atila Bernardes Marçalpt_BR
dc.creatorGuilherme Almeida Silva Ribeiropt_BR
dc.creatorPaulo Henrique de Oliveira Rapplpt_BR
dc.creatorEduardo Abramofpt_BR
dc.creatorPaulo Victor Sciammarella Maiapt_BR
dc.creatorLuciano de Moura Guimarãespt_BR
dc.creatorCarlos Alberto Pérezpt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.date.accessioned2023-03-21T14:59:05Z-
dc.date.available2023-03-21T14:59:05Z-
dc.date.issued2020-02-12-
dc.citation.volume4pt_BR
dc.citation.issue2pt_BR
dc.citation.spage023602-1pt_BR
dc.citation.epage023602-10pt_BR
dc.identifier.doihttps://doi.org/10.1103/PhysRevMaterials.4.023602pt_BR
dc.identifier.issn2475-9953pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/51084-
dc.description.resumoLayered materials can usually grow without strain on top of distinct substrates if the only interaction between them is due to van der Waals forces. In such a scenario it would be expected that the heterointerface made up of weak bounds would not affect the overlayed material significantly for several large lattice-mismatched systems. Here we have studied the first stages of the heteroepitaxial growth of layered bismuth telluride topological insulator on top of highly oriented pyrolitic graphite (HOPG) by molecular beam epitaxy. Samples were investigated by atomic force microscopy (AFM), synchrotron x-ray diffraction (XRD), and micro-Raman spectroscopy. AFM images show hexagonal/triangular flat islands with exposed HOPG areas for the low coverage regime, and the lattice parameter of these Bi2Te3 structures were measured by XRD. The existence of pseudomorphic strain at the initial Bi2Te3 layers was retrieved by both XRD and Raman spectroscopy. We have found evidence that Bi2Te3 layers near the interface are subject to an in-plane compressive strain, leading to a pseudomorphic out-of-plane lattice expansion. Furthermore, the presence of Bi2Te3 islands locally distorts the topmost layer of HOPG, resulting in tensile strain which was measured by Raman spectroscopy. The observed relaxation of 0.1–0.2% for each van der Waals gap is used to calculate elastic constants of Bi2 bilayers, which are crucial building blocks for the formation of other BixTey topological insulator compounds. Finally, the impact of such a strain in Bi2Te3 electronic structure was investigated by density functional theory calculations. The results show that the band structure of this strained material remains unchanged at the center of the Brillouin zone, confirming the robustness of surface states, but it is consistently affected at the M and K zone edges.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipFAPESP - Fundação de Amparo à Pesquisa do Estado de São Paulopt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofPhysical Review Materials-
dc.rightsAcesso Restritopt_BR
dc.subjectEpitaxial strainpt_BR
dc.subjectUltrathin filmspt_BR
dc.subjectX-ray diffractionpt_BR
dc.subjectCondensed matterpt_BR
dc.subject.otherDifraçãopt_BR
dc.subject.otherRaios Xpt_BR
dc.subject.otherFilmes ultrafinospt_BR
dc.subject.otherMatéria condensadapt_BR
dc.titleDirect observation of large strain through van der Waals gaps on epitaxial Bi2Te3/graphite: pseudomorphic relaxation and the role of Bi2 layers on the BixTey topological insulator seriespt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.4.023602pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6180-5302pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4956-5144pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-4050-9560pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7560-7470pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1767-1375pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9656-2996pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4284-3148pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
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