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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/51532
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dc.creatorAlejandro Cristians Rios Cuadrospt_BR
dc.creatorRodrigo Ribeiro de Andradept_BR
dc.creatorLuciano Andrey Montoropt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorLorena Aarão Rodriguespt_BR
dc.creatorAlisson Ronieri Cadorept_BR
dc.date.accessioned2023-04-04T12:39:36Z-
dc.date.available2023-04-04T12:39:36Z-
dc.date.issued2016-
dc.citation.volume3pt_BR
dc.citation.issue8pt_BR
dc.citation.spage1pt_BR
dc.citation.epage13pt_BR
dc.identifier.doihttps://doi.org/10.1088/2053-1591/3/8/085024pt_BR
dc.identifier.issn2053-1591pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/51532-
dc.description.resumoReversible resistance states were extensively observed in thin film systems, and their physical properties were in most cases determined by the electric behavior of the dielectric layer placed between contacts. Here we include SnO2 nanoparticles on TiO2 dielectric films, inducing modifications of the resistive switching behavior. We show that the choice of oxide nanoparticles with dielectric constant smaller than the dielectric constant of the main oxide film guides conductive channels, increasing the extension of the Fowler–Nordheim (tunneling) conduction regime during their electroforming as the density of nanoparticles rises. It is found that the SnO2 nanoparticles show reduced impact on the resistive switching response of devices produced following this methodology. The formation of Ti4O7 conductive channels is discussed based on electric measurements as well as on scanning probe and electron microscopy techniques.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentCMI - CENTRO DE MICROSCOPIApt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE QUÍMICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofMaterials Research Express-
dc.rightsAcesso Restritopt_BR
dc.subjectResistive switchingpt_BR
dc.subjectNanoparticlespt_BR
dc.subjectTransmission electron microscopypt_BR
dc.subject.otherNanopartículaspt_BR
dc.subject.otherMicroscopia eletrônica de transmissãopt_BR
dc.subject.otherDióxido de titâniopt_BR
dc.titleTailoring resistive switching properties of TiO2 with controlled incorporation of oxide nanoparticlespt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://iopscience.iop.org/article/10.1088/2053-1591/3/8/085024pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4682-6169pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1081-0915pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5157-3971pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1081-0915pt_BR
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