1. Repositório Institucional da UFMG
  2. Publicações Científicas e Culturais
  3. Artigo de Periódico
Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/51572
Full metadata record
DC FieldValueLanguage
dc.creatorPedro Henrique Rezende Gonçalvespt_BR
dc.creatorWendell Simões e Silvapt_BR
dc.creatorLuan Calil de Almeida Araújopt_BR
dc.creatorIgor de Souza Lana Antoniazzipt_BR
dc.creatorThais Chagas Peixoto Silvapt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorEdmar Avellar Soarespt_BR
dc.creatorVagner Eustáquio de Carvalhopt_BR
dc.creatorDouglas Rodrigues Miquitapt_BR
dc.creatorRogério Magalhães Paniagopt_BR
dc.date.accessioned2023-04-04T19:59:00Z-
dc.date.available2023-04-04T19:59:00Z-
dc.date.issued2019-
dc.citation.volume123pt_BR
dc.citation.issue23pt_BR
dc.citation.spage14398pt_BR
dc.citation.epage14403pt_BR
dc.identifier.doihttps://doi.org/10.1021/acs.jpcc.9b01811pt_BR
dc.identifier.issn1932-7455pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/51572-
dc.description.resumoIt is known that Sb2Se3 does not exhibit topological insulator behavior due to its orthorhombic structure. The introduction of a small amount of bismuth and tellurium may change its structure to hexagonal, leading to a stable topological insulator compound. We report here the synthesis and the structural, chemical, and electronic properties of the topological insulator BiSbSe2.5Te0.5. Combining X-ray and electron diffraction measurements, we demonstrate the formation of this stable quaternary hexagonal single crystal. We used X-ray photoelectron spectroscopy to determine quantitatively the exact chemical composition of the sample. The topological insulating behavior is similar to that of other bismuth chalcogenides, as probed by angle-resolved photoemission spectroscopy. A p-type doping, leading to a 0.15 eV shift of the Fermi level was found. This value compensates the intrinsically n-type doping produced by selenium vacancies. We also found a smaller effective mass and a higher electron group velocity for the electrons in the topological states compared with Bi2Se3.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofThe Journal of Physical Chemistry C-
dc.rightsAcesso Restritopt_BR
dc.subjectTopological insulatorpt_BR
dc.subject.otherIsoladores topológicospt_BR
dc.titleExperimental realization of a quaternary bi-chalcogenide topological insulator with smaller effective masspt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://pubs.acs.org/doi/10.1021/acs.jpcc.9b01811pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6773-8921pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-6174-9037pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0803-6011pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5688-5985pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3356-3312pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5319-4652pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5203-0944pt_BR
Appears in Collections:Artigo de Periódico

Files in This Item:
There are no files associated with this item.
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.