1. Repositório Institucional da UFMG
  2. Publicações Científicas e Culturais
  3. Artigo de Periódico
Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/51695
Full metadata record
DC FieldValueLanguage
dc.creatorLucas Átila Bernardes Marçalpt_BR
dc.creatorMarie-Ingrid Richardpt_BR
dc.creatorLuca Persichettipt_BR
dc.creatorVincent Favre-Nicolinpt_BR
dc.creatorHubert Renevierpt_BR
dc.creatorMassimo Fanfonipt_BR
dc.creatorAnna Sgarlatapt_BR
dc.creatorTobias Ü. Schüllipt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.date.accessioned2023-04-06T17:17:05Z-
dc.date.available2023-04-06T17:17:05Z-
dc.date.issued2019-
dc.citation.volume466pt_BR
dc.citation.spage801pt_BR
dc.citation.epage807pt_BR
dc.identifier.doihttps://doi.org/10.1016/j.apsusc.2018.10.094pt_BR
dc.identifier.issn11873-5584pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/51695-
dc.description.resumoWe investigate here the influence of Si substrate miscut on the strain and elastic energy of Ge islands. We show how the morphology, composition and the elastic energy for 4 and 13 monolayers (ML) Ge islands grown at 600 °C and 730 °C on vicinal Si(0 0 1) surfaces change with miscut angles ranging between 0° and 10°. Scanning Tunneling Microscopy is used to determine the island morphology. Resonant x-ray diffraction near the Ge-K absorption edge allows the determination of the Ge concentration as well as the elastic energy stored on such structures from their dependency on the lattice parameter. Simulations using the Finite Elements Method indicate that the enlargement of the SiGe broad peak retrieved from the x-ray diffraction measurements is actually caused by the asymmetrical faceting induced by large miscut angles. Such faceting has a strong effect on island density and elastic energy, producing differences that are proportional to those observed in conditions with distinct SiGe content.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.format.mimetypepdfpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofApplied Surface Science-
dc.rightsAcesso Abertopt_BR
dc.subjectGe islandspt_BR
dc.subjectMiscutpt_BR
dc.subjectFacetingpt_BR
dc.subjectSynchrotron x-ray diffractionpt_BR
dc.subjectFinite elements simulationspt_BR
dc.subject.otherMicroscopia de tunelamentopt_BR
dc.subject.otherRaios Xpt_BR
dc.subject.otherDifraçãopt_BR
dc.titleModified strain and elastic energy behavior of Ge islands formed on high-miscut Si(001) substratespt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://www.sciencedirect.com/science/article/pii/S0169433218327922pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4956-5144pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8172-3141pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6578-254Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0801-6712pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-2317-9344pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9662-0877pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-4523-0841pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
Appears in Collections:Artigo de Periódico

Files in This Item:
File Description SizeFormat 
Modified strain and elastic energy behavior of Ge islands formed on highmiscut Si(0 0 1) substrates.pdf4.88 MBAdobe PDFView/Open
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.