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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/52683
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dc.creatorBárbara Luiza Teixeira Rosapt_BR
dc.creatorLucas Átila Bernardes Marçalpt_BR
dc.creatorRodrigo Ribeiro de Andradept_BR
dc.creatorLuciana Dornelas Pintopt_BR
dc.creatorWagner Nunes Rodriguespt_BR
dc.creatorPatrícia Lustoza de Souzapt_BR
dc.creatorMauricio Pamplona Pirespt_BR
dc.creatorRicardo Wagner Nunespt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.date.accessioned2023-04-28T20:00:02Z-
dc.date.available2023-04-28T20:00:02Z-
dc.date.issued2017-
dc.citation.volume28pt_BR
dc.citation.issue30pt_BR
dc.citation.spage1pt_BR
dc.citation.epage12pt_BR
dc.identifier.doihttps://doi.org/10.1088/1361-6528/aa78e7pt_BR
dc.identifier.issn1361-6528pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/52683-
dc.description.resumoIn this work we attempt to directly observe anisotropic partial relaxation of epitaxial InAs islands using transmission electron microscopy (TEM) and synchrotron x-ray diffraction on a 15 nm thick InAs:GaAs nanomembrane. We show that under such conditions TEM provides improved real-space statistics, allowing the observation of partial relaxation processes that were not previously detected by other techniques or by usual TEM cross section images. Besides the fully coherent and fully relaxed islands that are known to exist above previously established critical thickness, we prove the existence of partially relaxed islands, where incomplete 60° half-loop misfit dislocations lead to a lattice relaxation along one of the 〈110〉 directions, keeping a strained lattice in the perpendicular direction. Although individual defects cannot be directly observed, their implications to the resulting island registry are identified and discussed within the frame of half-loops propagations.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetospt_BR
dc.description.sponsorshipFAPERJ - Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiropt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentCMI - CENTRO DE MICROSCOPIApt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofNanotechnology-
dc.rightsAcesso Abertopt_BR
dc.subjectSemiconductor nanomembranespt_BR
dc.subjectSynchrotron radiationpt_BR
dc.subjectTransmission electron microscopypt_BR
dc.subjectHalf-loop defect propagationpt_BR
dc.subject.otherNanomembranaspt_BR
dc.subject.otherMicroscopia eletrônica de transmissãopt_BR
dc.subject.otherRadiação sincrotrônicapt_BR
dc.titleObservation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranespt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://iopscience.iop.org/article/10.1088/1361-6528/aa78e7/metapt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4956-5144pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-6147-7799pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9664-0181pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
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