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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/53660
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dc.creatorNatália Pereira Rezendept_BR
dc.creatorLeonardo Cristiano Campospt_BR
dc.creatorRodrigo Gribel Lacerdapt_BR
dc.creatorAlisson Ronieri Cadorept_BR
dc.creatorAndreij de Carvalho Gadelhapt_BR
dc.creatorCíntia Lima Pereirapt_BR
dc.creatorKenji Watanabept_BR
dc.creatorTakashi Taniguchipt_BR
dc.creatorAndre Santarosa Ferlautopt_BR
dc.creatorÂngelo Malachias de Souzapt_BR
dc.creatorVinícius Ornelas da Silvapt_BR
dc.date.accessioned2023-05-19T19:25:35Z-
dc.date.available2023-05-19T19:25:35Z-
dc.date.issued2018-
dc.citation.volume5pt_BR
dc.citation.issue2pt_BR
dc.citation.spage1pt_BR
dc.citation.epage8pt_BR
dc.identifier.doihttps://doi.org/10.1002/aelm.201800591pt_BR
dc.identifier.issn2199-160Xpt_BR
dc.identifier.urihttp://hdl.handle.net/1843/53660-
dc.description.resumoThis work presents a detailed experimental investigation of the interaction between molecular hydrogen (H2) and monolayer MoS2 field effect transistors (MoS2 FET), aiming for sensing application. The MoS2 FET exhibits a response to H2 that covers a broad range of concentration (0.1–90%) at a relatively low operating temperature range (300–473 K). Most important, H2 sensors based on MoS2 FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS2 monotonically increases as a function of the H2 concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H2 adsorption driven by interaction with sulfur vacancies in the MoS2 surface (VS). This description is in agreement with related density functional theory studies about H2 adsorption on MoS2. Finally, measurements on partially defect-passivated MoS2 FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H2 interaction with the MoS2. These findings provide insights for future applications in catalytic process between monolayer MoS2 and H2 and also introduce MoS2 FETs as promising H2 sensors.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofAdvanced Electronic Materials-
dc.rightsAcesso Restritopt_BR
dc.subjectField effect transistorspt_BR
dc.subjectGas interactionpt_BR
dc.subjectHydrogen detectionpt_BR
dc.subjectMonolayer MoS2pt_BR
dc.subject.otherTransistorespt_BR
dc.subject.otherHidrogêniopt_BR
dc.subject.otherPropriedades eletrônicaspt_BR
dc.titleProbing the electronic properties of monolayer MoS2 via interaction with molecular hydrogenpt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://onlinelibrary.wiley.com/doi/10.1002/aelm.201800591pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-9146-733Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6792-7554pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4777-7370pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1081-0915pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-6350-7680pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3056-7289pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8703-4283pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-3636-7272pt_BR
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