Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/53941
Type: Artigo de Periódico
Title: Bi2:Bi2Te3 stacking influence on the surface electronic response of the topological insulator Bi4Te3
Authors: Thais Chagas Peixoto Silva
Guilherme Almeida Silva Ribeiro
Pedro Henrique Rezende Gonçalves
Luan Calil de Almeida Araújo
Wendell Simões e Silva
Ângelo Malachias de Souza
Mário Sérgio de Carvalho Mazzoni
Rogério Magalhães Paniago
Abstract: We report on the successful synthesis of a crystal of the strong topological insulator Bi4Te3 and the study of its surface electronic response. A combination of theoretical and experimental techniques allowed for a systematic study of the composition and electronic properties of the sample. These techniques include density functional theory (DFT), scanning tunneling microscopy and spectroscopy (STM-STS). DFT predicts that distinct surface topological states exist for the two surface terminations of Bi4Te3, i.e. Bi2 and Bi2Te3. These terminations are also clearly distinguished in STS measurements, which allow choosing the main conducting channel through a combination of topography and electronic response. We find that the density of states are similar to those of their parent crystals Bi2 and Bi2Te3, albeit shifted in energy.
Subject: Teoria do funcional da densidade
Microscopia de tunelamento de varredura
language: eng
metadata.dc.publisher.country: Brasil
Publisher: Universidade Federal de Minas Gerais
Publisher Initials: UFMG
metadata.dc.publisher.department: ICX - DEPARTAMENTO DE FÍSICA
Rights: Acesso Restrito
metadata.dc.identifier.doi: https://doi.org/10.1088/2516-1075/ab7398
URI: http://hdl.handle.net/1843/53941
Issue Date: 2020
metadata.dc.url.externa: https://iopscience.iop.org/article/10.1088/2516-1075/ab7398/meta
metadata.dc.relation.ispartof: Electronic Structure
Appears in Collections:Artigo de Periódico

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