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http://hdl.handle.net/1843/54492| Tipo: | Artigo de Periódico |
| Título: | Mg-doped GaAs nanowires with enhanced surface alloying for use as ohmic contacts in nanoelectronic devices |
| Autor(es): | Thais Chagas Peixoto Silva Guilherme Almeida Silva Ribeiro Bárbara Luiza Teixeira Rosa Danial Bahrami Arman Davtyan Rafael dos Reis Barreto Juan Carlos González Pérez Rogério Magalhães Paniago Ângelo Malachias de Souza |
| Resumen: | In this work, we have investigated the structural and electronic properties of Mg-doped GaAs(111) nanowires synthesized through a vapor–liquid–solid growth mechanism. The crystalline structure of these nanowires was measured using synchrotron X-ray diffraction, while their electronic structure was addressed by scanning tunneling spectroscopy. Scanning tunneling microscopy measurements revealed that conducting Ga2Mg/Mg clusters are observed at {110} nanowire lateral surfaces, allowing electrical contacts with reduced Schottky barriers. This suggests that similar alloyed surfaces can be produced with other dopants, enabling the development of distinct Ohmic contacts in these systems. Density functional theory was used to investigate the electronic response of Ga2Mg. While at room temperature, electronic variable-range hopping drives the nanowires into a metallic behavior, quantum confinement is observed at low temperatures. |
| Asunto: | Espectroscopia de tunelamento Dispositivos nanoeletrônicos |
| Idioma: | eng |
| País: | Brasil |
| Editor: | Universidade Federal de Minas Gerais |
| Sigla da Institución: | UFMG |
| Departamento: | ICX - DEPARTAMENTO DE FÍSICA |
| Tipo de acceso: | Acesso Restrito |
| Identificador DOI: | https://doi.org/10.1021/acsanm.1c03192 |
| URI: | http://hdl.handle.net/1843/54492 |
| Fecha del documento: | 2021 |
| metadata.dc.url.externa: | https://pubs.acs.org/doi/10.1021/acsanm.1c03192?ref=PDF |
| metadata.dc.relation.ispartof: | ACS Applied Nano Materials |
| Aparece en las colecciones: | Artigo de Periódico |
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