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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/62215
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dc.creatorCintia Lima Pereirapt_BR
dc.creatorAlisson Ronieri Cadorept_BR
dc.creatorNatália Pereira Rezendept_BR
dc.creatorAndreij de Carvalho Gadelhapt_BR
dc.creatorEdmar Avellar Soarespt_BR
dc.creatorHelio Chachampt_BR
dc.creatorLeonardo Cristiano Campospt_BR
dc.creatorRodrigo Gribel Lacerdapt_BR
dc.date.accessioned2024-01-01T12:12:29Z-
dc.date.available2024-01-01T12:12:29Z-
dc.date.issued2019-
dc.citation.volume6pt_BR
dc.citation.issue2pt_BR
dc.citation.spage1pt_BR
dc.citation.epage11pt_BR
dc.identifier.doihttps://doi.org/10.1088/2053-1583/ab0b23pt_BR
dc.identifier.issn2053-1583pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/62215-
dc.description.resumoIn this work, we present an investigation regarding how and why molecular hydrogen (H2) changes the electronic properties of graphene field effect transistors (GFETs). We demonstrate that interaction with H2 leads to local doping of graphene near of the graphene-contact heterojunction. We also show that such interaction is strongly dependent on the characteristics of the metal-graphene interface. By changing the type of metal in the contact, we observe that Ohmic contacts can be strongly or weakly electrostatically coupled with graphene. For strongly coupled contacts, the signature of the charge transfer effect promoted by the contacts results on asymmetric ambipolar conduction, and such asymmetry can be tunable under interaction with H2. On the other hand, for contacts weakly coupled with graphene, the hydrogen interaction has a more profound effect. In such a situation, the devices show a second charge neutrality point (CNP) in graphene transistor transfer curves (a double-peak response) upon H2 exposure. We propose that this double-peak phenomenon arises from the decoupling of the work function of graphene and that of the metallic electrodes induced by the H2 molecules. We also show that the gas-induced modifications at the metal-graphene interface can be exploited to create a controlled graphene p-n junction, with considerable electron transfer to graphene layer and significant variation in the graphene resistance. These effects can pave the way for a suitable metallic contact engineering providing great potential for the application of such devices as gas sensors.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartof2D Materials-
dc.rightsAcesso Restritopt_BR
dc.subjectMolecular hydrogenpt_BR
dc.subjectHeterojunctionpt_BR
dc.subjectGraphene sensorpt_BR
dc.subjectGraphene interfacept_BR
dc.subject.otherHidrogêniopt_BR
dc.subject.otherGrafenopt_BR
dc.titleReversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interfacept_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/ab0b23pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1081-0915pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-9146-733Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-6350-7680pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3356-3312pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5041-9094pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6792-7554pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4777-7370pt_BR
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