Use este identificador para citar ou linkar para este item: http://hdl.handle.net/1843/64194
Tipo: Artigo de Periódico
Título: Graphene/h-BN in-plane heterostructures: stability and electronic and transport properties
Autor(es): Regiane do Nascimento
Elizane Efigenia de Moraes
Matheus Josué de Souza Matos
David Prendergast
Taíse Matte Manhabosco
Alan Barros de Oliveira
Helio Chacham
Ronaldo Junio Campos Batista
Resumo: We present a first-principles study of structural, electronic, and transport properties of in-plane Gr:BN heterostructures in the form of graphene stripes embedded in a BN matrix. In our calculations, we consider carbon, nitrogen, and boron chemical potentials that are consistent with growth conditions (gas sources and temperatures) at either nitrogen-rich or boron-rich environments. Interestingly, we find that structures with excess of B atoms can be energetically more stable than structures with excess of N atoms even in N-rich growth conditions. The general trend is that N-rich growth conditions favor B/N stoichiometric heterostructures, while B-rich growth conditions favor heterostructures with excess of B atoms at the graphene/BN junctions, such that only B–C bonds occur at both edges of a graphene stripe region embedded in BN. We also investigate the dependence of magnetic properties and the band gap magnitudes of graphene stripe regions embedded in BN with several structural characteristics. We find that graphene stripes with only one bond type (either B–C or N–C) at the graphene/BN edges always present metallic behavior, with zigzag-oriented stripes of this type presenting large magnetic moments. Finally, we obtain the characteristic I–V curves for systems formed by junctions of two graphene stripes embedded in BN, one of them terminated by C–N bonds and the other terminated by C–B bonds. We find that systems of this type should present rectifying behavior.
Assunto: Estrutura química
Energia
Heteroestrutura
Idioma: eng
País: Brasil
Editor: Universidade Federal de Minas Gerais
Sigla da Instituição: UFMG
Departamento: ICX - DEPARTAMENTO DE FÍSICA
Tipo de Acesso: Acesso Restrito
Identificador DOI: https://doi.org/10.1021/acs.jpcc.9b02491
URI: http://hdl.handle.net/1843/64194
Data do documento: 2019
metadata.dc.url.externa: https://pubs.acs.org/doi/10.1021/acs.jpcc.9b02491
metadata.dc.relation.ispartof: The Journal of Physical Chemistry C
Aparece nas coleções:Artigo de Periódico

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