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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/64378
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dc.creatorHenrique Limborçopt_BR
dc.creatorMarcos Vinicius Baeta Moreirapt_BR
dc.creatorFranklin Massami Matinagapt_BR
dc.creatorAlfredo Gontijo de Oliveirapt_BR
dc.creatorJuan Carlos González Pérezpt_BR
dc.date.accessioned2024-02-21T11:44:07Z-
dc.date.available2024-02-21T11:44:07Z-
dc.date.issued2016-
dc.citation.issue31pt_BR
dc.citation.spage1pt_BR
dc.citation.epage4pt_BR
dc.identifier.doihttps://doi.org/10.1109/SBMicro.2016.7731321pt_BR
dc.identifier.isbn9781509027880pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/64378-
dc.description.resumoThe influence of the growth conditions in the incorporation of Mg dopant atoms during the growth of GaAs thin films using two different substrate orientations was investigated electrically by Hall effect measurements and by Photoluminescence spectroscopy. Mg-doped GaAs thin films were successfully grown by molecular beam epitaxy with free carrier concentration varying between ~10 16 cm -3 to ~10 19 cm -3 . The wide doping range obtained is suitable to fabricate a great variety of optoelectronic devices. The analysis of the incorporation of Mg atoms for several growth temperatures established two values for the thermal desorption activation energy ED of Mg atoms in the GaAs surface, nominally ED 111 = (1.94 ± 0.14) eV for the (111)B samples and ED 100 = (1.11 ± 0.16) eV for the (100). Two very close bands were observed in the PL emission of the samples and identified as the electron-Mg acceptor level (e-A) transition, at approximately 1.49 eV, and the donor-to-Mg acceptor level (D-A) transition, at approximately 1.48 eV. At high doping levels a red shift of the e-A and D-A transitions was observed for the (111)B thin films, effect that are related to many-body interactions as the doping level increases.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofSymposium on Microelectronics Technology and Devices (SBMicro)-
dc.rightsAcesso Restritopt_BR
dc.subjectThin filmspt_BR
dc.subjectPhotoluminescence spectroscopypt_BR
dc.subject.otherFilmes finospt_BR
dc.subject.otherEspectroscopia de fotoluminescênciapt_BR
dc.titleMg-doping of GaAs thin films grown by MBEpt_BR
dc.typeArtigo de Eventopt_BR
dc.url.externahttps://ieeexplore.ieee.org/document/7731321pt_BR
dc.identifier.orcidhttp://orcid.org/0000-0003-1181-3982pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0507-2471pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9155-1657pt_BR
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