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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/64380
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dc.creatorF. D. Brandãopt_BR
dc.creatorGeraldo Mathias Ribeiropt_BR
dc.creatorP. H. Vazpt_BR
dc.creatorJuan Carlos González Pérezpt_BR
dc.creatorKlaus Wilhelm Heinrich Krambrockpt_BR
dc.date.accessioned2024-02-21T12:13:58Z-
dc.date.available2024-02-21T12:13:58Z-
dc.date.issued2016-
dc.citation.volume119pt_BR
dc.citation.issue23pt_BR
dc.citation.spage235701-1pt_BR
dc.citation.epage235701-8pt_BR
dc.identifier.doihttps://doi.org/10.1063/1.4954017pt_BR
dc.identifier.issn1089-7550pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/64380-
dc.description.resumoMoS2 monolayers, a two-dimensional (2D) direct semiconductor material with an energy gap of 1.9 eV, offer many opportunities to be explored in different electronic devices. Defects often play dominant roles in the electronic and optical properties of semiconductor devices. However, little experimental information about intrinsic and extrinsic defects or impurities is available for this 2D system, and even for macroscopic 3D samples for which MoS2 shows an indirect bandgap of 1.3 eV. In this work, we evaluate the nature of impurities with unpaired spins using electron paramagnetic resonance (EPR) in different geological macroscopic samples. Regarding the fact that monolayers are mostly obtained from natural crystals, we expect that the majority of impurities found in macroscopic samples are also randomly present in MoS2 monolayers. By EPR at low temperatures, rhenium donors and sulfur vacancy acceptors are identified as the main impurities in bulk MoS2 with a corresponding donor concentration of about 108–12 defects/cm2 for MoS2 monolayer. Electrical transport experiments as a function of temperature are in good agreement with the EPR results, revealing a shallow donor state with an ionization energy of 89 meV and a concentration of 7 × 1015 cm−3, which we attribute to rhenium, as well as a second deeper donor state with ionization energy of 241 meV with high concentration of 2 × 1019 cm−3 and net acceptor concentration of 5 × 1018 cm−3 related to sulfur vacancies.pt_BR
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológicopt_BR
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Geraispt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofJournal of Applied Physics-
dc.rightsAcesso Restritopt_BR
dc.subjectBand gappt_BR
dc.subjectSemiconductor devicespt_BR
dc.subjectElectric measurementspt_BR
dc.subjectCrystalline solidspt_BR
dc.subjectOptical propertiespt_BR
dc.subjectIons and propertiespt_BR
dc.subjectTransition metalspt_BR
dc.subjectChemical elementspt_BR
dc.subjectElectron paramagnetic resonance spectroscopypt_BR
dc.subject.otherSemicondutorespt_BR
dc.subject.otherMedidas elétricaspt_BR
dc.subject.otherPropriedades ópticaspt_BR
dc.subject.otherMetais de transiçãopt_BR
dc.subject.otherEspectroscopia de ressonância paramagnética eletrônicapt_BR
dc.titleIdentification of rhenium donors and sulfur vacancy acceptors in layered MoS2 bulk samplespt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://pubs.aip.org/aip/jap/article/119/23/235701/142212/Identification-of-rhenium-donors-and-sulfurpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9155-1657pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-7562-0285pt_BR
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