1. Repositório Institucional da UFMG
  2. Publicações Científicas e Culturais
  3. Artigo de Periódico
Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/64381
Full metadata record
DC FieldValueLanguage
dc.creatorGabriel Vinicius de Oliveira Silvapt_BR
dc.creatorFrancesca Soavipt_BR
dc.creatorFabio Cicoirapt_BR
dc.creatorClara Santatopt_BR
dc.creatorArunprabaharan Subramanianpt_BR
dc.creatorXiang Mengpt_BR
dc.creatorShiming Zhangpt_BR
dc.creatorMartin Schwellberger Barbosapt_BR
dc.creatorBill Baloukaspt_BR
dc.creatorDaniel Chartrandpt_BR
dc.creatorJuan Carlos González Pérezpt_BR
dc.creatorMarcelo Ornaghi Orlandipt_BR
dc.date.accessioned2024-02-21T12:28:51Z-
dc.date.available2024-02-21T12:28:51Z-
dc.date.issued2019-
dc.citation.volume52pt_BR
dc.citation.issue30pt_BR
dc.citation.spage1pt_BR
dc.citation.epage9pt_BR
dc.identifier.doihttps://doi.org/10.1088/1361-6463/ab1dbbpt_BR
dc.identifier.issn1361-6463pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/64381-
dc.description.resumoIon-gated transistors employ ionic gating media (e.g. ionic liquids, polymer electrolytes, aqueous saline solutions) to modulate the density of the charge carriers in the transistor channel. Not only they operate at low voltages (ca 0.5–1 V) but they can also feature printability, flexibility and easy integration with chemo- and bio-sensing platforms. Metal oxides are transistor channel materials interesting for their processability in air, at low temperature. Among metal oxides, tungsten oxide (band gap ca 2.5–2.7 eV) stands out for its electrochromic, gas sensing and photocatalytic properties. Here we demonstrate ion-gated tungsten oxide transistors and phototransistors working in different ion gating media, such as one hydrophobic ionic liquid and an aqueous electrolyte, fabricated both on rigid and flexible substrates. Ion-gated tungsten oxide phototransistors operating in aqueous media could be used as photocatalytic sensors in portable applications.pt_BR
dc.description.sponsorshipFAPESP - Fundação de Amparo à Pesquisa do Estado de São Paulopt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofJournal of Physics D: Applied Physics-
dc.rightsAcesso Restritopt_BR
dc.subjectIonic liquidspt_BR
dc.subjectTungsten oxidept_BR
dc.subjectIon-gated transistorspt_BR
dc.subjectPhototransistorspt_BR
dc.subjectPolyimidept_BR
dc.subject.otherÓxidospt_BR
dc.subject.otherTungstêniopt_BR
dc.subject.otherPolímerospt_BR
dc.titleTungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating mediapt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://iopscience.iop.org/article/10.1088/1361-6463/ab1dbbpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-3415-6938pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0047-608Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6731-0538pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-3768-4333pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1255-357Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9155-1657pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-2054-3235pt_BR
Appears in Collections:Artigo de Periódico

Files in This Item:
There are no files associated with this item.
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.