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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/64937
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dc.creatorFernando Gonçalves Riospt_BR
dc.creatorEmilson Ribeiro Viana Juniorpt_BR
dc.creatorGeraldo Mathias Ribeiropt_BR
dc.creatorJuan Carlos González Pérezpt_BR
dc.creatorArturo Abelenda Garcíapt_BR
dc.creatorDaiane Cristina Peruzzopt_BR
dc.date.accessioned2024-02-29T12:48:11Z-
dc.date.available2024-02-29T12:48:11Z-
dc.date.issued2016-
dc.citation.volume31pt_BR
dc.citation.issue7pt_BR
dc.citation.spage1309pt_BR
dc.citation.epage1316pt_BR
dc.identifier.doihttps://doi.org/10.1007/s10103-016-1974-zpt_BR
dc.identifier.issn1435-604Xpt_BR
dc.identifier.urihttp://hdl.handle.net/1843/64937-
dc.description.resumoThe prevalence of peri-implantitis and the absence of a standard approach for decontamination of the dental implant surface have led to searches for effective therapies. Since the source of diode lasers is portable, has reduced cost, and does not cause damage to the titanium surface of the implant, high-power diode lasers have been used for this purpose. The effect of laser irradiation on the implants is the elevation of the temperature surface. If this elevation exceeds 47 °C, the bone tissue is irreversibly damaged, so for a safety therapy, the laser parameters should be controlled. In this study, a diode laser of GaAsAl was used to irradiate titanium dental implants, for powers 1.32 to 2.64 W (real) or 2.00 to 4.00 W (nominal), in continuous/pulsed mode DC/AC, with exposure time of 5/10 s, with/without air flow for cooling. The elevation of the temperature was monitored in real time in two positions: cervical and apical. The best results for decontamination using a 968-nm diode laser were obtained for a power of 1.65 and 1.98 W (real) for 10 s, in DC or AC mode, with an air flow of 2.5 l/min. In our perspective in this article, we determine a suggested approach for decontamination of the dental implant surface using a 968-nm diode laser.pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofLasers in Medical Science-
dc.rightsAcesso Restritopt_BR
dc.subjectPeriodontitispt_BR
dc.subjectDental implantspt_BR
dc.subjectGaAsAl laserpt_BR
dc.subjectTemperature increasept_BR
dc.subjectDiode laser irradiationpt_BR
dc.subjectDecontaminationpt_BR
dc.subject.otherImplantes dentáriospt_BR
dc.subject.otherPeriodontitept_BR
dc.titleTemperature evaluation of dental implant surface irradiated with high-power diode laserpt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://link.springer.com/article/10.1007/s10103-016-1974-z#citeaspt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1883-3508pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9155-1657pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7202-339Xpt_BR
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