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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/65039
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dc.creatorOsvaldo de Melo Pereirapt_BR
dc.creatorVicente Torres-Costapt_BR
dc.creatorLuis García Pelayopt_BR
dc.creatorYoandris Gonzálezpt_BR
dc.creatorOmar Concepción Díazpt_BR
dc.creatorMiguel Manso Silvánpt_BR
dc.creatorRubén López Nebredapt_BR
dc.creatorJose Luis Pau Vizcainopt_BR
dc.creatorJuan Carlos González Pérezpt_BR
dc.creatorAurelio Climent-Fontpt_BR
dc.date.accessioned2024-03-01T13:14:30Z-
dc.date.available2024-03-01T13:14:30Z-
dc.date.issued2018-
dc.citation.issue25pt_BR
dc.citation.spage6799pt_BR
dc.citation.epage6807pt_BR
dc.identifier.doihttps://doi.org/10.1039/c8tc01685bpt_BR
dc.identifier.issn2050-7534pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/65039-
dc.description.resumoA novel procedure, based on a closed space vapor transport (CSVT) configuration, has been devised to grow films or flakes of pure MoO2 in a reductive atmosphere, at a relatively low temperature and using MoO3 as the source. In contrast to the conventional CSVT technique, in the proposed method a temperature gradient is not required for the growth to take place, which occurs through an intermediate volatile transport species that is produced in the complex reduction reaction of MoO3. An added value of this simple method is the possibility of transforming the MoO2 into MoTe2, one of the most interesting members of the transition metal dichalcogenide family. This is achieved in a sequential process that includes the growth of Mo oxide and its (in situ) tellurization in two consecutive steps.pt_BR
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superiorpt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofJournal of Materials Chemistry C-
dc.rightsAcesso Restritopt_BR
dc.subjectThin filmspt_BR
dc.subjectTellurizationpt_BR
dc.subject.otherFilmes finospt_BR
dc.titleChemically driven isothermal closed space vapor transport of MoO2: thin films, flakes and in situ tellurizationpt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://pubs.rsc.org/en/content/articlelanding/2018/tc/c8tc01685bpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8502-5711pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5066-2799pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6667-7776pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-8197-7523pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-5063-1607pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-2893-0413pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1371-071Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9155-1657pt_BR
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