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Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/65073
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dc.creatorBárbara Luiza Teixeira Rosapt_BR
dc.creatorBruno Ricardo de Carvalhopt_BR
dc.creatorHelio Chachampt_BR
dc.creatorBernardo Ruegger Almeida Nevespt_BR
dc.creatorMauricio Terronespt_BR
dc.creatorLeandro Malard Moreirapt_BR
dc.creatorKazunori Fujisawapt_BR
dc.creatorJoyce Cristina da Cruz Santospt_BR
dc.creatorTianyi Zhangpt_BR
dc.creatorMatheus Josué de Souza Matospt_BR
dc.creatorFrederico Barros de Sousapt_BR
dc.creatorTiago Campolina Barbosapt_BR
dc.creatorLucas Lafetá Prates da Fonsecapt_BR
dc.creatorSergio Luís Lima de Moraes Ramospt_BR
dc.date.accessioned2024-03-01T15:45:12Z-
dc.date.available2024-03-01T15:45:12Z-
dc.date.issued2022-
dc.citation.volume106pt_BR
dc.citation.issue11pt_BR
dc.identifier.doihttps://doi.org/10.1103/physrevb.106.115301pt_BR
dc.identifier.issn2469-9969pt_BR
dc.identifier.urihttp://hdl.handle.net/1843/65073-
dc.description.resumoWhile the spatially nonhomogeneous light emission from synthetic WS2 monolayers is frequently reported in the literature, the nature of this phenomenon still requires thoughtful investigation. Here, we combine several characterization techniques (optical imaging, scanning probe and electron microscopy) along with density functional theory to investigate the presence of substitutional doping localized at narrow regions along the S zigzag edge of WS2 monolayers. We verified that photoluminescence quenching along narrow regions is not related to grain boundaries but to substitutional impurities of lighter metals at the W sites, which modify the radiative and nonradiative decay channels. We also found potential candidates for occupying the W site through ADF-STEM analysis and discussed their impact on photoluminescence quenching by performing density functional theory calculations. Our findings shed light on how atomic defects introduced during WS2 monolayer's synthesis impact the crystalline quality and, therefore, the development of high-performance optoelectronic devices based on semiconducting 2D materials.pt_BR
dc.languageengpt_BR
dc.publisherUniversidade Federal de Minas Geraispt_BR
dc.publisher.countryBrasilpt_BR
dc.publisher.departmentICX - DEPARTAMENTO DE FÍSICApt_BR
dc.publisher.initialsUFMGpt_BR
dc.relation.ispartofPhysical Review B-
dc.rightsAcesso Restritopt_BR
dc.subjectLuminescencept_BR
dc.subjectDichalcogenidespt_BR
dc.subjectNanotechnologypt_BR
dc.subjectAtomic force microscopypt_BR
dc.subject.otherLuminescênciapt_BR
dc.subject.otherNanotecnologiapt_BR
dc.subject.otherMicroscopia de força atômicapt_BR
dc.titleInvestigation of spatially localized defects in synthetic WS2 monolayerspt_BR
dc.typeArtigo de Periódicopt_BR
dc.url.externahttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.106.115301pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9433-3532pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5188-8685pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-5041-9094pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0464-4754pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-0010-2851pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4207-9653pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-3827-6921pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-0398-3992pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-6303-4222pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-1594-9142pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7056-0722pt_BR
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