Please use this identifier to cite or link to this item: http://hdl.handle.net/1843/80293
Type: Artigo de Periódico
Title: Twisted bilayer graphene: a versatile fabrication method and the detection of variable nanometric strain caused by twist-angle disorder
Authors: Andreij de Carvalho Gadelha
Takashi Taniguchi
Cassiano Rabelo e Silva
Pedro Paulo de Mello Venezuela
Gilberto Medeiros Ribeiro
Ado Jorio de Vasconcelos
Luiz Gustavo de Oliveira Lopes Cançado
Leonardo Cristiano Campos
Douglas August Alexander Ohlberg
Fabiano Costa Santana
Eliel Gomes da Silva Neto
Jéssica Santos Lemos
Vinícius Ornelas da Silva
Daniel de Abreu Miranda
Rafael Battistella Nadas
Kenji Watanabe
Abstract: Twisted bilayer heterostructures (TBHs) are materials whose physical properties depend on the twist angle between the two layers of two-dimensional (2D) materials. Those heterostructures are not found in nature, and it is quite common to fabricate them with a nonhomogeneous twist angle, giving rise to the so-called twist-angle disorder. The most reliable method used to fabricate TBHs is the tear-and-stack method, which enables production of TBHs starting from a crystal of hexagonal boron nitride that works as a stamp. However, the twisted 2D materials stay attached to the boron nitride permanently. In this paper, we present a pyramid trunk stamp that enables a versatile and easy fabrication of twisted heterostructures without the aid of boron nitride crystals. The semipyramidal stamp enables good visualization of the 2D materials, easy alignments, and transfer of 2D materials between different substrates, and the same stamp can be reused for many fabrications. We demonstrate our method producing twisted bilayer graphene (TBG), and we present an investigation based on nano-Raman hyperspectral imaging, which can be implemented to characterize regions of TBG under twist-angle disorder, strain, or doping.
Subject: Grafeno
Microscopia de varredura por tunelamento
language: eng
metadata.dc.publisher.country: Brasil
Publisher: Universidade Federal de Minas Gerais
Publisher Initials: UFMG
metadata.dc.publisher.department: ICX - DEPARTAMENTO DE CIÊNCIA DA COMPUTAÇÃO
ICX - DEPARTAMENTO DE FÍSICA
Rights: Acesso Restrito
metadata.dc.identifier.doi: https://doi.org/10.1021/acsanm.0c03230
URI: http://hdl.handle.net/1843/80293
Issue Date: 2021
metadata.dc.url.externa: https://pubs.acs.org/doi/10.1021/acsanm.0c03230
metadata.dc.relation.ispartof: ACS Applied Nano Materials
Appears in Collections:Artigo de Periódico

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