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http://hdl.handle.net/1843/80337| Type: | Artigo de Periódico |
| Title: | Gate-tunable non-volatile photomemory effect in MoS2 transistors |
| Authors: | Andreij de Carvalho Gadelha Alisson Ronieri Cadore Kenji Watanabe Takashi Taniguchi Ana Maria de Paula Leandro Malard Moreira Rodrigo Gribel Lacerda Leonardo Cristiano Campos |
| Abstract: | Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS 2 transistors. The photomemory is based on a photodoping effect—a controlled way of manipulating the density of free charges in monolayer MoS 2 using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS 2 leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50% of the information for tens of years. Furthermore, we show that the photodoping is gate-tunable, enabling control of the recorded memory states. Finally, we propose a model to explain the photodoping, and we provide experimental evidence supporting such a phenomenon. In summary, our work includes the MoS 2 phototransistors in the non-volatile memory devices and expands the possibilities of memory application beyond conventional memory architectures. |
| Subject: | Dispositivos optoeletrônicos |
| language: | eng |
| metadata.dc.publisher.country: | Brasil |
| Publisher: | Universidade Federal de Minas Gerais |
| Publisher Initials: | UFMG |
| metadata.dc.publisher.department: | ICX - DEPARTAMENTO DE FÍSICA |
| Rights: | Acesso Restrito |
| metadata.dc.identifier.doi: | https://doi.org/10.1088/2053-1583/ab0af1 |
| URI: | http://hdl.handle.net/1843/80337 |
| Issue Date: | 2019 |
| metadata.dc.url.externa: | https://iopscience.iop.org/article/10.1088/2053-1583/ab0af1 |
| metadata.dc.relation.ispartof: | 2D Materials |
| Appears in Collections: | Artigo de Periódico |
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