Scanning tunneling measurements in membrane-based nanostructures: spatially-resolved quantum state analysis in postprocessed epitaxial systems for optoelectronic applications

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dc.creatorBárbara Luiza Teixeira Rosa
dc.creatorCarlos Alberto Parra Murillo
dc.creatorThais Chagas Peixoto Silva
dc.creatorAilton José Garcia Junior
dc.creatorPaulo Sérgio Soares Guimarães
dc.creatorChristoph Friedrich Deneke
dc.creatorRogério Magalhães Paniago
dc.creatorÂngelo Malachias de Souza
dc.date.accessioned2023-04-04T17:38:32Z
dc.date.accessioned2025-09-09T01:29:29Z
dc.date.available2023-04-04T17:38:32Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFAPESP - Fundação de Amparo à Pesquisa do Estado de São Paulo
dc.identifier.doihttps://doi.org/10.1021/acsanm.9b01124
dc.identifier.issn2574-0970
dc.identifier.urihttps://hdl.handle.net/1843/51559
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofACS Applied Nano Materials
dc.rightsAcesso Restrito
dc.subjectPontos quânticos
dc.subjectNanomembranas
dc.subjectEspectroscopia de tunelamento
dc.subject.otherQuantum dots
dc.subject.otherNanomembranes
dc.subject.otherSTM
dc.subject.otherScanning tunneling spectroscopy
dc.titleScanning tunneling measurements in membrane-based nanostructures: spatially-resolved quantum state analysis in postprocessed epitaxial systems for optoelectronic applications
dc.typeArtigo de periódico
local.citation.epage4664
local.citation.issue7
local.citation.spage4655
local.citation.volume2
local.description.resumoNanoscale heterostructure engineering is the main target for the development of optoelectronic devices. In this sense, a precise knowledge of local electronic response after materials processing is required to envisage technological applications. A number of local probe techniques that address single nanostructure signals were satisfactorily employed in semiconductor epitaxial systems. In this work we show that the use of chemically etched semiconductor nanomembranes allows carrying out scanning tunneling spectroscopy (STS) measurements in a postprocessed system which was otherwise studied mainly under in situ conditions that differ from the operational regime. We were able to acquire STS spectra with energy level resolved response on InAs quantum dots grown within a 15 nm-thick GaAs single-crystalline film transferred to an Au(111) surface. The presence of a native oxide layer does not affect the result, keeping the reliability of the usual ultra high vacuum (UHV) procedures. The use of nanomembranes also opens up the possibility of tailoring properties via additional variables such as nanomembrane thickness and surface charge depletion. Our method is applicable to a broad class of postprocessed layers extracted in nanomembrane format from epitaxial systems that are potential candidates for optoelectronic applications.
local.identifier.orcidhttps://orcid.org/0000-0002-7245-0209
local.identifier.orcidhttps://orcid.org/0000-0001-5688-5985
local.identifier.orcidhttps://orcid.org/0000-0002-1364-2622
local.identifier.orcidhttps://orcid.org/0000-0002-0113-2641
local.identifier.orcidhttps://orcid.org/0000-0002-8556-386X
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acsanm.9b01124

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