Temperature dependence of the double‐resonance Raman bands in monolayer MoS2

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dc.creatorRafael Nunes Gontijo
dc.creatorAndreij de Carvalho Gadelha
dc.creatorOrlando José Silveira Júnior
dc.creatorBruno Ricardo de Carvalho
dc.creatorRicardo Wagner Nunes
dc.creatorLeonardo Cristiano Campos
dc.creatorMarcos Assunção Pimenta
dc.creatorAriete Righi
dc.creatorCristiano Fantini Leite
dc.date.accessioned2023-06-28T11:57:16Z
dc.date.accessioned2025-09-09T00:30:17Z
dc.date.available2023-06-28T11:57:16Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFINEP - Financiadora de Estudos e Projetos, Financiadora de Estudos e Projetos
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1002/jrs.5736
dc.identifier.issn1097-4555
dc.identifier.urihttps://hdl.handle.net/1843/55450
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofJournal of Raman Spectroscopy
dc.rightsAcesso Restrito
dc.subjectMetais de transição
dc.subjectAnálise espectral
dc.subjectFotoluminescência
dc.subject.otherDouble‐resonance Raman
dc.subject.otherLow temperature
dc.subject.otherMulti‐phonon interactions
dc.subject.otherPhotoluminescence
dc.titleTemperature dependence of the double‐resonance Raman bands in monolayer MoS2
dc.typeArtigo de periódico
local.citation.epage1874
local.citation.issue12
local.citation.spage1867
local.citation.volume50
local.description.resumoThis work reports a detailed study of the double-resonance (DR) Raman bands of single-layer MoS2 as a function of temperature, using many different laser energies in the region of the excitonic transitions and at different temperatures between 80 and 300 K. Our measurements show that the DR bands are strongly affected by temperature and the results are explained in terms of the temperature dependence of both the phonon wavenumber and the excitonic energy. In order to distinguish these two effects, the excitonic transitions were directly measured by photoluminescence as a function of temperature. It was observed from the multiple-excitation results that the dispersion of the DR bands measured with different laser lines depends on temperature. The resonance condition was evidenced by considering the difference between energies of the laser excitation and the excitonic transition, at a given temperature. Our findings for the temperature dependence of the DR process in single-layer MoS2 can be extended to other classes of transition metal dichalcogenide materials.
local.identifier.orcidhttps://orcid.org/0000-0002-6335-483X
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0002-0403-9485
local.identifier.orcidhttps://orcid.org/0000-0001-5188-8685
local.identifier.orcidhttps://orcid.org/0000-0003-2810-8649
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.identifier.orcidhttps://orcid.org/0000-0002-3389-0682
local.identifier.orcidhttps://orcid.org/0000-0001-8752-9609
local.identifier.orcidhttps://orcid.org/0000-0003-0436-7857
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://analyticalsciencejournals.onlinelibrary.wiley.com/doi/10.1002/jrs.5736

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