Probing the electronic properties of monolayer MoS2 via interaction with molecular hydrogen

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dc.creatorNatália Pereira Rezende
dc.creatorLeonardo Cristiano Campos
dc.creatorRodrigo Gribel Lacerda
dc.creatorAlisson Ronieri Cadore
dc.creatorAndreij de Carvalho Gadelha
dc.creatorCíntia Lima Pereira
dc.creatorKenji Watanabe
dc.creatorTakashi Taniguchi
dc.creatorAndre Santarosa Ferlauto
dc.creatorÂngelo Malachias de Souza
dc.creatorVinícius Ornelas da Silva
dc.date.accessioned2023-05-19T19:25:35Z
dc.date.accessioned2025-09-08T23:43:50Z
dc.date.available2023-05-19T19:25:35Z
dc.date.issued2018
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1002/aelm.201800591
dc.identifier.issn2199-160X
dc.identifier.urihttps://hdl.handle.net/1843/53660
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofAdvanced Electronic Materials
dc.rightsAcesso Restrito
dc.subjectTransistores
dc.subjectHidrogênio
dc.subjectPropriedades eletrônicas
dc.subject.otherField effect transistors
dc.subject.otherGas interaction
dc.subject.otherHydrogen detection
dc.subject.otherMonolayer MoS2
dc.titleProbing the electronic properties of monolayer MoS2 via interaction with molecular hydrogen
dc.typeArtigo de periódico
local.citation.epage8
local.citation.issue2
local.citation.spage1
local.citation.volume5
local.description.resumoThis work presents a detailed experimental investigation of the interaction between molecular hydrogen (H2) and monolayer MoS2 field effect transistors (MoS2 FET), aiming for sensing application. The MoS2 FET exhibits a response to H2 that covers a broad range of concentration (0.1–90%) at a relatively low operating temperature range (300–473 K). Most important, H2 sensors based on MoS2 FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS2 monotonically increases as a function of the H2 concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H2 adsorption driven by interaction with sulfur vacancies in the MoS2 surface (VS). This description is in agreement with related density functional theory studies about H2 adsorption on MoS2. Finally, measurements on partially defect-passivated MoS2 FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H2 interaction with the MoS2. These findings provide insights for future applications in catalytic process between monolayer MoS2 and H2 and also introduce MoS2 FETs as promising H2 sensors.
local.identifier.orcidhttps://orcid.org/0000-0002-9146-733X
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.identifier.orcidhttps://orcid.org/0000-0003-4777-7370
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0003-3056-7289
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0002-3636-7272
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://onlinelibrary.wiley.com/doi/10.1002/aelm.201800591

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