Multiple excitations and temperature study of the disorder-induced Raman bands in MoS2

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dc.creatorRafael Nunes Gontijo
dc.creatorTianyi Zhang
dc.creatorKazunori Fujisawa
dc.creatorAna Laura Elias
dc.creatorMarcos Assunção Pimenta
dc.creatorAriete Righi
dc.creatorMauricio Terrones
dc.creatorCristiano Fantini Leite
dc.date.accessioned2023-06-28T12:17:06Z
dc.date.accessioned2025-09-08T23:28:23Z
dc.date.available2023-06-28T12:17:06Z
dc.date.issued2021
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1088/2053-1583/ac0170
dc.identifier.issn2053-1583
dc.identifier.urihttps://hdl.handle.net/1843/55452
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof2D Materials
dc.rightsAcesso Restrito
dc.subjectMetais de transição
dc.subjectAnálise espectral
dc.subjectFonons
dc.subjectTeoria dos excitons
dc.subject.otherPhonons
dc.subject.otherExcitons
dc.subject.otherMultiple excitations
dc.subject.otherDefects
dc.titleMultiple excitations and temperature study of the disorder-induced Raman bands in MoS2
dc.typeArtigo de periódico
local.citation.epage9
local.citation.issue3
local.citation.spage1
local.citation.volume8
local.description.resumoRaman spectroscopy has been extensively used to probe disorder in graphene and other carbon-related materials, and disorder-induced (DI) Raman bands are prominent even for low defect densities. The DI bands in MoS2 have been studied in the last years, but a multiple excitation study using laser excitation energies near the excitonic energies was still lacking. In this work, we investigate the low-frequency defect-induced Raman bands in MoS2 coming from the acoustic phonon branches near the Brillouin zone edge using samples produced by mechanical exfoliation and chemical vapor deposition, recorded with different laser excitation energies close to the resonance with the excitonic transitions, and measured at different temperatures, from 100 K to 400 K. Our results show that the defect-induced Raman processes are affected by both excitation energy and temperature. We find that the temperature of measurement affects the linear dependence between the intensities of the DI peaks and the defect concentration. In particular, we observed that the ratio of intensities of the DI longitudinal acoustic (LA) and transversal acoustic (TA) modes with respect to the first-order E′ mode is about the same for the two different samples when results are corrected by the defect density. We show in this work that the largest intensity of the DI peaks occurs for laser energies in the resonance with the excitonic transitions. Finally, we introduce a general expression that provides the parameters for the quantification of defects in MoS2 samples based on the intensity of the DI Raman bands, measured at different laser energies across the excitonic transitions.
local.identifier.orcidhttps://orcid.org/0000-0002-6335-483X
local.identifier.orcidhttps://orcid.org/0000-0002-3827-6921
local.identifier.orcidhttps://orcid.org/0000-0002-4119-6084
local.identifier.orcidhttps://orcid.org/0000-0002-3389-0682
local.identifier.orcidhttps://orcid.org/0000-0001-8752-9609
local.identifier.orcidhttps://orcid.org/0000-0003-0010-2851
local.identifier.orcidhttps://orcid.org/0000-0003-0436-7857
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/2053-1583/ac0170

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