Investigation of spatially localized defects in synthetic WS2 monolayers

dc.creatorBárbara Luiza Teixeira Rosa
dc.creatorBruno Ricardo de Carvalho
dc.creatorHelio Chacham
dc.creatorBernardo Ruegger Almeida Neves
dc.creatorMauricio Terrones
dc.creatorLeandro Malard Moreira
dc.creatorKazunori Fujisawa
dc.creatorJoyce Cristina da Cruz Santos
dc.creatorTianyi Zhang
dc.creatorMatheus Josué de Souza Matos
dc.creatorFrederico Barros de Sousa
dc.creatorTiago Campolina Barbosa
dc.creatorLucas Lafetá Prates da Fonseca
dc.creatorSergio Luís Lima de Moraes Ramos
dc.date.accessioned2024-03-01T15:45:12Z
dc.date.accessioned2025-09-09T01:34:24Z
dc.date.available2024-03-01T15:45:12Z
dc.date.issued2022
dc.identifier.doihttps://doi.org/10.1103/physrevb.106.115301
dc.identifier.issn2469-9969
dc.identifier.urihttps://hdl.handle.net/1843/65073
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofPhysical Review B
dc.rightsAcesso Restrito
dc.subjectLuminescência
dc.subjectNanotecnologia
dc.subjectMicroscopia de força atômica
dc.subject.otherLuminescence
dc.subject.otherDichalcogenides
dc.subject.otherNanotechnology
dc.subject.otherAtomic force microscopy
dc.titleInvestigation of spatially localized defects in synthetic WS2 monolayers
dc.typeArtigo de periódico
local.citation.issue11
local.citation.volume106
local.description.resumoWhile the spatially nonhomogeneous light emission from synthetic WS2 monolayers is frequently reported in the literature, the nature of this phenomenon still requires thoughtful investigation. Here, we combine several characterization techniques (optical imaging, scanning probe and electron microscopy) along with density functional theory to investigate the presence of substitutional doping localized at narrow regions along the S zigzag edge of WS2 monolayers. We verified that photoluminescence quenching along narrow regions is not related to grain boundaries but to substitutional impurities of lighter metals at the W sites, which modify the radiative and nonradiative decay channels. We also found potential candidates for occupying the W site through ADF-STEM analysis and discussed their impact on photoluminescence quenching by performing density functional theory calculations. Our findings shed light on how atomic defects introduced during WS2 monolayer's synthesis impact the crystalline quality and, therefore, the development of high-performance optoelectronic devices based on semiconducting 2D materials.
local.identifier.orcidhttps://orcid.org/0000-0001-9433-3532
local.identifier.orcidhttps://orcid.org/0000-0001-5188-8685
local.identifier.orcidhttps://orcid.org/0000-0001-5041-9094
local.identifier.orcidhttps://orcid.org/0000-0003-0464-4754
local.identifier.orcidhttps://orcid.org/0000-0003-0010-2851
local.identifier.orcidhttps://orcid.org/0000-0003-4207-9653
local.identifier.orcidhttps://orcid.org/0000-0002-3827-6921
local.identifier.orcidhttps://orcid.org/0000-0002-0398-3992
local.identifier.orcidhttps://orcid.org/0000-0001-6303-4222
local.identifier.orcidhttps://orcid.org/0000-0002-1594-9142
local.identifier.orcidhttps://orcid.org/0000-0001-7056-0722
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.106.115301

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