Splitting longitudinal-transversal em uma microcavidade semicondutora

Abstract

In this work we investigate a splitting of aproximately 0,19 meV in the luminescense spectrum of the Lower Polariton (LP) in a semiconductor microcavity of thickness with a GaAs quantum well embedded. There are some possible causes for this energy splitting in the LP mode. Along this dissertation we mention the main ones and then follow to demonstrate, by a process of hypothesis elimination based in photoluminescense experiments, that the phenom observed is a splitting between excitons with longitudinal and transversal dipole momentos in relation to the exciton wave vector in the plane of the quantum well due to the exchanche interactions.