Mg-doped GaAs nanowires with enhanced surface alloying for use as ohmic contacts in nanoelectronic devices

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dc.creatorThais Chagas Peixoto Silva
dc.creatorGuilherme Almeida Silva Ribeiro
dc.creatorBárbara Luiza Teixeira Rosa
dc.creatorDanial Bahrami
dc.creatorArman Davtyan
dc.creatorRafael dos Reis Barreto
dc.creatorJuan Carlos González Pérez
dc.creatorRogério Magalhães Paniago
dc.creatorÂngelo Malachias de Souza
dc.date.accessioned2023-06-05T13:19:47Z
dc.date.accessioned2025-09-09T01:33:14Z
dc.date.available2023-06-05T13:19:47Z
dc.date.issued2021
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1021/acsanm.1c03192
dc.identifier.issn2574-0970
dc.identifier.urihttps://hdl.handle.net/1843/54492
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofACS Applied Nano Materials
dc.rightsAcesso Restrito
dc.subjectEspectroscopia de tunelamento
dc.subjectDispositivos nanoeletrônicos
dc.subject.otherScanning tunneling spectroscopy
dc.subject.otherScanning tunneling microscopy
dc.subject.otherNanowires
dc.subject.otherClusters
dc.subject.otherLocal density of states
dc.titleMg-doped GaAs nanowires with enhanced surface alloying for use as ohmic contacts in nanoelectronic devices
dc.typeArtigo de periódico
local.citation.epage12649
local.citation.issue11
local.citation.spage12640
local.citation.volume4
local.description.resumoIn this work, we have investigated the structural and electronic properties of Mg-doped GaAs(111) nanowires synthesized through a vapor–liquid–solid growth mechanism. The crystalline structure of these nanowires was measured using synchrotron X-ray diffraction, while their electronic structure was addressed by scanning tunneling spectroscopy. Scanning tunneling microscopy measurements revealed that conducting Ga2Mg/Mg clusters are observed at {110} nanowire lateral surfaces, allowing electrical contacts with reduced Schottky barriers. This suggests that similar alloyed surfaces can be produced with other dopants, enabling the development of distinct Ohmic contacts in these systems. Density functional theory was used to investigate the electronic response of Ga2Mg. While at room temperature, electronic variable-range hopping drives the nanowires into a metallic behavior, quantum confinement is observed at low temperatures.
local.identifier.orcidhttps://orcid.org/0000-0001-5688-5985
local.identifier.orcidhttps://orcid.org/0000-0002-4050-9560
local.identifier.orcidhttps://orcid.org/0000-0002-6476-2114
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0002-5203-0944
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acsanm.1c03192?ref=PDF

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