Nonlinear dark-field imaging of one-dimensional defects in monolayer dichalcogenides

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dc.creatorBruno Ricardo de Carvalho
dc.creatorSwastik Kar
dc.creatorVincent Henry Crespi
dc.creatorMauricio Terrones Maldonado
dc.creatorLeandro Malard Moreira
dc.creatorYuanxi Wang
dc.creatorKazunori Fujisawa
dc.creatorTianyi Zhang
dc.creatorEthan Kahn
dc.creatorIsmail Bilgin
dc.creatorPulickel Madhavapanicker Ajayan
dc.creatorAna Maria de Paula
dc.creatorMarcos Assunção Pimenta
dc.date.accessioned2023-03-07T17:01:28Z
dc.date.accessioned2025-09-08T23:26:48Z
dc.date.available2023-03-07T17:01:28Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.identifier.doihttps://doi.org/10.1021/acs.nanolett.9b03795
dc.identifier.issn1530-6992
dc.identifier.urihttps://hdl.handle.net/1843/50706
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofNano Letters
dc.rightsAcesso Restrito
dc.subjectPlasmons
dc.subject.otherNonlinear dark-field
dc.subject.other2D monolayer dichalcogenides
dc.subject.otherDefects imaging
dc.subject.otherPlasmons
dc.subject.otherNanoantennae
dc.titleNonlinear dark-field imaging of one-dimensional defects in monolayer dichalcogenides
dc.typeArtigo de periódico
local.citation.epage291
local.citation.issue1
local.citation.spage284
local.citation.volume20
local.description.resumoOne-dimensional defects in two-dimensional (2D) materials can be particularly damaging because they directly impede the transport of charge, spin, or heat and can introduce a metallic character into otherwise semiconducting systems. Current characterization techniques suffer from low throughput and a destructive nature or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and nondestructively probe grain boundaries and edges in monolayer dichalcogenides (i.e., MoSe2, MoS2, and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Čerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defect’s metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress toward both applications and fundamental materials discoveries.
local.identifier.orcidhttps://orcid.org/0000-0001-5188-8685
local.identifier.orcidhttps://orcid.org/0000-0001-6478-7082
local.identifier.orcidhttps://orcid.org/0000-0003-3846-3193
local.identifier.orcidhttps://orcid.org/0000-0002-0659-1134
local.identifier.orcidhttps://orcid.org/0000-0002-3827-6921
local.identifier.orcidhttps://orcid.org/0000-0002-7614-1972
local.identifier.orcidhttps://orcid.org/0000-0002-8551-5948
local.identifier.orcidhttps://orcid.org/0000-0002-3389-0682
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acs.nanolett.9b03795

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