Quantitative measurement of manganese incorporation into (In,Mn)As islands by resonant x-ray scattering

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dc.creatorLucas Atila Bernardes Marçal
dc.creatorMario Sergio de Carvalho Mazzoni
dc.creatorLetícia Gonçalves Nunes Coelho
dc.creatorEuclydes Marega Junior
dc.creatorGregory J. Salamo
dc.creatorRogerio Magalhães Paniago
dc.creatorÂngelo Malachias de Souza
dc.date.accessioned2025-07-04T19:34:57Z
dc.date.accessioned2025-09-09T00:07:40Z
dc.date.available2025-07-04T19:34:57Z
dc.date.issued2017
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipFAPESP - Fundação de Amparo à Pesquisa do Estado de São Paulo
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.96.245301
dc.identifier.issn2469-9969
dc.identifier.urihttps://hdl.handle.net/1843/83342
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofPhysical Review B
dc.rightsAcesso Restrito
dc.subjectSemicondutores
dc.subjectTeoria do Funcional da Densidade
dc.subjectSpintrônica
dc.subjectPropriedades estruturais
dc.subjectDifração de raios X
dc.subject.otherInterstitials
dc.subject.otherSpintronics
dc.subject.otherStructural properties
dc.subject.otherSemiconductors
dc.subject.otherDensity functional calculations
dc.subject.otherX-ray diffraction
dc.titleQuantitative measurement of manganese incorporation into (In,Mn)As islands by resonant x-ray scattering
dc.typeArtigo de periódico
local.citation.epage245301-7
local.citation.issue24
local.citation.spage245301-1
local.citation.volume96
local.description.resumoIn this paper we present a method to determine the occupation of Mn ions in epitaxial (In,Mn)As nanostructures by resonant x-ray diffraction near the Mn 𝐾-absorption edge, exploiting the dependency of the intensity of both (200) superstructure and the (400) fundamental reflections. The concentrations of Mn atoms on substitutional In sites, as well as on In- and As-interstitial sites, were unambiguously determined. A threshold concentration for the interstitial sites, which are occupied first for low nominal Mn deposition content, was found. Calculations using density-functional theory indicate that a higher occupancy of such sites can be favorable with respect to the occupation of substitutional sites, depending on surface potentials and growth kinetic effects.
local.identifier.orcidhttps://orcid.org/0000-0003-4956-5144
local.identifier.orcidhttps://orcid.org/0000-0002-3334-4630
local.identifier.orcidhttps://orcid.org/0000-0002-5962-784X
local.identifier.orcidhttps://orcid.org/0000-0002-5203-0944
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.245301

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