Topological valley transport at the curved boundary of a folded bilayer graphene

Página do item simplificado
dc.creatorEdrian Mania
dc.creatorAlisson Ronieri Cadore
dc.creatorTakashi Taniguchi
dc.creatorKenji Watanabe
dc.creatorLeonardo Cristiano Campos
dc.date.accessioned2025-02-17T12:56:35Z
dc.date.accessioned2025-09-09T01:23:04Z
dc.date.available2025-02-17T12:56:35Z
dc.date.issued2019
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.format.mimetypepdf
dc.identifier.doihttps://doi.org/10.1038/s42005-018-0106-4
dc.identifier.issn2399-3650
dc.identifier.urihttps://hdl.handle.net/1843/80114
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofCommunications Physics
dc.rightsAcesso Aberto
dc.subjectPropriedades eletrônicas
dc.subject.otherValleytronics
dc.subject.otherBallistic electron transport
dc.subject.otherElectronic properties and devices
dc.subject.otherElectronic properties and materials
dc.titleTopological valley transport at the curved boundary of a folded bilayer graphene
dc.typeArtigo de periódico
local.citation.epage6
local.citation.spage1
local.citation.volume2
local.description.resumoThe development of valleytronics demands long-range electronic transport with preserved valley index, a degree of freedom similar to electron spin. A promising structure for this end is a topological one-dimensional channel formed in a bilayer graphene, called a domain wall. In these channels, the valley-index defines the propagation direction of the charge carriers, and the chiral edge states are robust over many kinds of disorder. However, the fabrication of domain walls are challenging, requiring the design of complex multi-gate structures or production on rough substrates, showing a limited mean free path. Here, we report on a high-quality domain wall formed at the curved boundary of a folded bilayer graphene. Our experiments reveal long-range ballistic transport at such topological channels with the two-terminal resistance close to the ballistic resistance R = e2/4h at zero-magnetic field and the four-terminal resistance near to zero. At the bulk, we measure a tunable band gap.
local.identifier.orcidhttps://orcid.org/0000-0003-1081-0915
local.identifier.orcidhttps://orcid.org/0000-0002-1467-3105
local.identifier.orcidhttps://orcid.org/0000-0003-3701-8119
local.identifier.orcidhttps://orcid.org/0000-0001-6792-7554
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.nature.com/articles/s42005-018-0106-4

Arquivos

Pacote original

Agora exibindo 1 - 1 de 1
Imagem de Miniatura
Nome:
Topological valley transport at the curved boundary of a folded bilayer graphene.pdf
Tamanho:
948.58 KB
Formato:
Adobe Portable Document Format
Baixar

Licença do pacote

Agora exibindo 1 - 1 de 1
Imagem de Miniatura
Nome:
License.txt
Tamanho:
1.99 KB
Formato:
Plain Text
Descrição:
Baixar

Coleções

Artigo de Periódico

Logo UFMG