Tailoring the dielectric layer structure for enhanced carrier mobility in organic transistors: the use of hybrid inorganic/organic multilayer dielectrics

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dc.creatorMuriel de Pauli
dc.creatorUte Zschieschang
dc.creatorIngrid David Barcelos
dc.creatorHagen Klauk
dc.creatorÂngelo Malachias de Souza
dc.date.accessioned2023-05-22T17:44:08Z
dc.date.accessioned2025-09-09T00:37:47Z
dc.date.available2023-05-22T17:44:08Z
dc.date.issued2016
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1002/aelm.201500402
dc.identifier.issn2199-160X
dc.identifier.urihttps://hdl.handle.net/1843/53749
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofAdvanced Electronic Materials
dc.rightsAcesso Restrito
dc.subjectTransistores
dc.subject.otherDielectric layer
dc.subject.otherOrganic transistors
dc.titleTailoring the dielectric layer structure for enhanced carrier mobility in organic transistors: the use of hybrid inorganic/organic multilayer dielectrics
dc.typeArtigo de periódico
local.citation.epage8
local.citation.issue5
local.citation.spage1
local.citation.volume2
local.description.resumoWe show that the use of a hybrid multilayer dielectric (HMD) obtained by stacking successive Al2O3 /SAM bilayers can tailor interface phenomena and thereby signifi cantly improve the charge-carrier mobility and operational stability of organic TFTs.
local.identifier.orcidhttps://orcid.org/0000-0002-5778-7161
local.identifier.orcidhttps://orcid.org/0000-0003-4563-5635
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.201500402

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