Exploration of noise impact on integrated bulk current sensors

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dc.creatorJoão Guilherme Mourão Melo
dc.creatorFrank Sill Torres
dc.date.accessioned2025-03-26T15:07:57Z
dc.date.accessioned2025-09-09T00:42:08Z
dc.date.available2025-03-26T15:07:57Z
dc.date.issued2016
dc.identifier.doi10.1007/s10836-016-5579-z
dc.identifier.issn0923-8174
dc.identifier.urihttps://hdl.handle.net/1843/80945
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofJournal of Electronic Testing
dc.rightsAcesso Restrito
dc.subjectSemicondutores complementares de óxido metálico
dc.subjectCircuitos de sinais mistos
dc.subjectCircuitos eletrônicos - Projetos
dc.subjectControle do ruido
dc.subject.otherBulk Built-In-Current Sensors
dc.subject.otherReliability
dc.subject.othernoise sources close to the sensors lead to false detections if the RMS value is in specific range
dc.titleExploration of noise impact on integrated bulk current sensors
dc.typeArtigo de periódico
local.citation.epage173
local.citation.spage163
local.citation.volume32
local.description.resumoCurrent CMOS (Complementary Metal Oxide Semiconductor) technologies show an increasing susceptibility to a rising amount of failure sources. This includes also radiation induced soft errors, which requires countermeasures on several design levels. Hereby, BBICS (Bulk Built-In Current Sensors) represent a promising approach on circuit level. However, it is expected that these circuits, like similar sensors measuring substrate effects, are strongly susceptible to substrate noise. The intention of this work is an in-depth noise analysis of representative bulk sensors based on extracted layout data. Thereby, several aspects are considered, like sensor activation thresholds, impact of the distance to the noise source, and noise generation by test circuits. Results indicate that already noise RMS level of 5 to 9 % of the supply voltage can lead to false detections, which are values in the same order of magnitude of noise generated by test circuits.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://link.springer.com/article/10.1007/s10836-016-5579-z

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