Analysis of total ionizing dose effects for highly scaled CMOS devices in low earth orbit

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dc.creatorMuhammad Sajid
dc.creatorNikolay Chechenin
dc.creatorFrank Sill Torres
dc.creatorMuhammad Nabeel Hanif
dc.creatorUsman Ali Gulzari
dc.creatorShakaib Arslan
dc.creatorEhsan Ullah Khan
dc.date.accessioned2025-04-22T14:30:24Z
dc.date.accessioned2025-09-08T23:14:36Z
dc.date.available2025-04-22T14:30:24Z
dc.date.issued2018
dc.identifier.doihttps://doi.org/10.1016/j.nimb.2018.05.014
dc.identifier.issn0168-583X
dc.identifier.urihttps://hdl.handle.net/1843/81733
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofNuclear instruments and methods in physics research section b: beam interactions with materials and atoms
dc.rightsAcesso Restrito
dc.subjectSemicondutores complementares de óxido metálico
dc.subjectRadiação ionizante
dc.subject.otherSoft errors
dc.subject.otherTCAD
dc.subject.otherDesign for reliability
dc.subject.otherSimulation of TID effects on CMOS technology demonstrated,TID effects for space radiation environment,TID related device parameters visualized, Reliability of devices operation in LEO environment predicted, Proposed appropriate/required shield for NMOS transistor
dc.subject.otherTotal ionizing dose
dc.subject.otherRadiation
dc.subject.otherCMOS technology
dc.subject.otherRadiation induced leakage current
dc.subject.otherSpace radiation environment
dc.subject.otherRadiation
dc.subject.otherLow earth orbit
dc.titleAnalysis of total ionizing dose effects for highly scaled CMOS devices in low earth orbit
dc.typeArtigo de periódico
local.citation.epage37
local.citation.spage30
local.citation.volume428
local.description.resumoTotal Ionizing Dose (TID) effects are an essential concern for integrated devices that are operating in space environment. We present in this work an extensive study of TID effects in Deep-Submicron and Nanoscale CMOS technologies. Principal aspects are the changes of the transistors I-V characteristics due to TID effects, the variation of the threshold voltage and the impact of radiation on the carrier densities and mobility as well as on the electrical potentials and the leakage currents. Further, we discuss a potential solution that reduces TID effects in CMOS devices. The device level simulations consider a satellite application that orbits in Low Earth Orbit (LEO), leading to dose levels of up to 500 krad(Si). Results clearly indicate the high impact of TID on the transistor parameters, enforcing the designer to consider countermeasures in order to guarantee the circuits reliability.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0168583X18303215

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