Cd and Cu interdiffusion in Cu(In, Ga)Se2/CdS hetero-interfaces

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dc.creatorPedro M. P. Salomé
dc.creatorSascha Sadewasser
dc.creatorRodrigo Ribeiro de Andrade
dc.creatorJennifer Cláudia Passos Teixeira
dc.creatorJan Keller
dc.creatorTobias Törndahl
dc.creatorNicoleta Nicoara
dc.creatorMarika Edoff
dc.creatorJuan Carlos González Pérez
dc.creatorJoaquim Fernando Monteiro de Carvalho Pratas Leitão
dc.date.accessioned2024-03-12T12:50:36Z
dc.date.accessioned2025-09-08T23:42:31Z
dc.date.available2024-03-12T12:50:36Z
dc.date.issued2017
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1109/JPHOTOV.2017.2666550
dc.identifier.issn2156-3403
dc.identifier.urihttps://hdl.handle.net/1843/65685
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofIEEE Journal of Photovoltaics
dc.rightsAcesso Restrito
dc.subjectCélulas solares
dc.subjectFilmes finos
dc.subjectMicroscopia eletrônica de transmissão
dc.subject.otherSolar cells
dc.subject.otherThin films
dc.subject.otherTransmission electron microscopy
dc.titleCd and Cu interdiffusion in Cu(In, Ga)Se2/CdS hetero-interfaces
dc.typeArtigo de periódico
local.citation.epage863
local.citation.issue3
local.citation.spage858
local.citation.volume7
local.description.resumoWe report a detailed characterization of an industry-like prepared Cu(In, Ga)Se 2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach, we identified that this effect is independent of focused-ion beam sample preparation and of the transmission electron microscopy grid. Furthermore, PL measurements before and after an HCl etch indicate a lower degree of defects in the postetch sample, compatible with the segregates removal. We hypothesize that Cu 2-x Se nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favorable. These results provide important additional information about the formation of the CIGS/CdS interface.
local.identifier.orcidhttps://orcid.org/0000-0002-1050-2958
local.identifier.orcidhttps://orcid.org/0000-0001-8384-6025
local.identifier.orcidhttps://orcid.org/0000-0002-3155-6832
local.identifier.orcidhttps://orcid.org/0000-0002-3461-6036
local.identifier.orcidhttps://orcid.org/0000-0001-7757-5847
local.identifier.orcidhttps://orcid.org/0000-0002-0909-4635
local.identifier.orcidhttps://orcid.org/0000-0003-4111-4613
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0001-8131-3313
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://ieeexplore.ieee.org/document/7865928

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