Enhanced electronic transport properties of Te roll-like nanostructures
| dc.creator | Emilson Ribeiro Viana Junior | |
| dc.creator | Nestor Cifuentes Taborda | |
| dc.creator | Juan Carlos González Pérez | |
| dc.date.accessioned | 2025-02-25T15:07:27Z | |
| dc.date.accessioned | 2025-09-08T23:40:12Z | |
| dc.date.available | 2025-02-25T15:07:27Z | |
| dc.date.issued | 2022 | |
| dc.description.sponsorship | CNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico | |
| dc.description.sponsorship | FAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais | |
| dc.description.sponsorship | CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior | |
| dc.format.mimetype | ||
| dc.identifier.doi | https://doi.org/10.3762/bjnano.13.106 | |
| dc.identifier.issn | 2190-4286 | |
| dc.identifier.uri | https://hdl.handle.net/1843/80414 | |
| dc.language | eng | |
| dc.publisher | Universidade Federal de Minas Gerais | |
| dc.relation.ispartof | Beilstein Journal of Nanotechnology | |
| dc.rights | Acesso Aberto | |
| dc.subject | Tellurium | |
| dc.subject | Nanoestrutura | |
| dc.subject | Microscopia eletrônica de varredura | |
| dc.subject.other | Electrical characterization | |
| dc.subject.other | Field-effect transistors | |
| dc.subject.other | Hopping conduction | |
| dc.subject.other | Nanobelts | |
| dc.subject.other | Tellurium | |
| dc.title | Enhanced electronic transport properties of Te roll-like nanostructures | |
| dc.type | Artigo de periódico | |
| local.citation.epage | 1291 | |
| local.citation.spage | 1284 | |
| local.citation.volume | 13 | |
| local.description.resumo | In this work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced by a facile synthesis and extensively studied by scanning and transmission electron microscopy. The nanostructures are made of pure and crystalline Tellurium with trigonal structure (t-Te), and exhibit p-type conductivity with enhanced field-effect hole mobility between 273 cm2/Vs at 320 K and 881 cm2/Vs at 5 K. The thermal ionization of shallow acceptors, with small ionization energy between 2 and 4 meV, leads to free-hole conduction at high temperatures. The free-hole mobility follows a negative power-law temperature behavior, with an exponent between −1.28 and −1.42, indicating strong phonon scattering in this temperature range. At lower temperatures, the electronic conduction is dominated by nearest-neighbor hopping (NNH) conduction in the acceptor band, with a small activation energy ENNH ≈ 0.6 meV and an acceptor concentration of NA ≈ 1 × 1016 cm−3. These results demonstrate the enhanced electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications. | |
| local.identifier.orcid | https://orcid.org/0000-0002-1883-3508 | |
| local.identifier.orcid | https://orcid.org/0000-0003-3638-7959 | |
| local.identifier.orcid | https://orcid.org/0000-0001-9155-1657 | |
| local.publisher.country | Brasil | |
| local.publisher.department | ICX - DEPARTAMENTO DE FÍSICA | |
| local.publisher.initials | UFMG | |
| local.url.externa | https://www.beilstein-journals.org/bjnano/articles/13/106 |