Electronic conduction mechanisms and defects in polycrystalline antimony selenide

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dc.creatorNestor Cifuentes Taborda
dc.creatorGeraldo Mathias Ribeiro
dc.creatorJuan Carlos González Pérez
dc.creatorSantunu Ghosh
dc.creatorMaria Rosário Pimenta Correia
dc.creatorPedro M. P. Salomé
dc.creatorPaulo A. Fernandes
dc.creatorSamaneh Ranjbar
dc.creatorSiddhartha Garud
dc.creatorBart Vermang
dc.creatorA. Shongolova
dc.date.accessioned2025-02-24T18:50:36Z
dc.date.accessioned2025-09-09T01:21:25Z
dc.date.available2025-02-24T18:50:36Z
dc.date.issued2020
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1021/acs.jpcc.0c00398
dc.identifier.issn1932-7455
dc.identifier.urihttps://hdl.handle.net/1843/80371
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofThe Journal of Physical Chemistry C
dc.rightsAcesso Restrito
dc.subjectCondutividade elétrica
dc.subjectCalor
dc.subject.otherDefects
dc.subject.otherElectrical conductivity
dc.subject.otherHeat transfer
dc.subject.otherMobility
dc.subject.otherThermodynamic modeling
dc.titleElectronic conduction mechanisms and defects in polycrystalline antimony selenide
dc.typeArtigo de periódico
local.citation.epage7682
local.citation.issue14
local.citation.spage7677
local.citation.volume124
local.description.resumoA study of the electronic conduction mechanisms and electrically active defects in polycrystalline Sb2Se3 is presented. It is shown that for temperatures above 200 K, the electrical transport is dominated by thermal emission of free holes, ionized from shallow acceptors, over the intergrain potential barriers. In this temperature range, the temperature dependence of the mobility of holes, limited by the intergrain potential barriers, is the main contributor to the observed thermal activation energy of the conductivity of 485 meV. However, at lower temperatures, nearest-neighbor and Mott variable range hopping transport in the bulk of the grains turn into the dominant conduction mechanisms. Important parameters of the electronic structure of the Sb2Se3 thin film such as the average intergrain potential barrier height ϕ = 391 meV, the intergrain trap density Nt = 3.4 × 1011 cm–2, the shallow acceptor ionization energy EA0 = 124 meV, the acceptor density NA = 1 × 1017 cm–3, the net donor density ND = 8.3 × 1016 cm–3, and the compensation ratio k = 0, 79 were determined from the analysis of these measurements.
local.identifier.orcidhttps://orcid.org/0000-0003-3638-7959
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0002-2666-9461
local.identifier.orcidhttps://orcid.org/0000-0003-3781-0085
local.identifier.orcidhttps://orcid.org/0000-0002-1050-2958
local.identifier.orcidhttps://orcid.org/0000-0001-5448-5048
local.identifier.orcidhttps://orcid.org/0000-0003-2308-3307
local.identifier.orcidhttps://orcid.org/0000-0003-2669-2087
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acs.jpcc.0c00398

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