Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology

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dc.creatorLeonarde do Nascimento Rodrigues
dc.creatorLucas da Conceição
dc.creatorÂngelo Malachias de Souza
dc.creatorOdilon Divino Damasceno Couto Júnior
dc.creatorFernando Iikawa
dc.creatorChristoph Friedrich Deneke
dc.creatorDiego Scolfaro da Silva
dc.date.accessioned2023-04-27T16:04:59Z
dc.date.accessioned2025-09-09T00:17:16Z
dc.date.available2023-04-27T16:04:59Z
dc.date.issued2021
dc.format.mimetypepdf
dc.identifier.doihttps://doi.org/10.1021/acsanm.1c00354
dc.identifier.issn2574-0970
dc.identifier.urihttps://hdl.handle.net/1843/52585
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofACS Applied Nano Materials
dc.rightsAcesso Aberto
dc.subjectMicrotubos
dc.subjectSemicondutores
dc.subjectInformação quântica
dc.subject.otherBand structure inversion
dc.subject.otherSemiconductor quantum well
dc.subject.otherOptical selection rules
dc.subject.otherRolled-up microtubes
dc.subject.otherTensile and compressive hybrid state
dc.subject.otherCurved semiconductor membrane
dc.titleRolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology
dc.typeArtigo de periódico
local.citation.epage3147
local.citation.issue3
local.citation.spage3140
local.citation.volume4
local.description.resumoStrain-based band structure engineering is a powerful tool to tune the optical and electronic properties of semiconductor nanostructures. We show that we can tune the band structure of InGaAs semiconductor quantum wells and modify the helicity of the emitted light by integrating them into rolled-up heterostructures and changing their geometrical configuration. Experimental results from photoluminescence and photoluminescence excitation spectroscopy demonstrate a strong energy shift of the valence-band states in comparison to flat structures, as a consequence of an inversion of the heavy-hole with the light-hole states in a rolled-up InGaAs quantum well. The inversion and mixing of the band states lead to a strong change in the optical selection rules for the rolled-up quantum wells, which show vanishing spin polarization in the conduction band even under near-resonant excitation conditions. Band structure calculations are carried out to understand the changes in the electronic transitions and to predict the emission and absorption spectra for a given geometrical configuration. Comparison between experiment and theory shows an excellent agreement. These observed profound changes in the fundamental properties can be applied as a strategic route to develop novel optical devices for quantum information technology.
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0002-8416-3805
local.identifier.orcidhttps://orcid.org/0000-0002-0865-7379
local.identifier.orcidhttps://orcid.org/0000-0002-8556-386X
local.identifier.orcidhttps://orcid.org/0000-0003-1127-4990
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acsanm.1c00354

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