CdS and Zn1−xSnxOy buffer layers for CIGS solar cells

Página do item simplificado
dc.creatorPedro M. P. Salomé
dc.creatorJoaquim Fernando Monteiro de Carvalho Pratas Leitão
dc.creatorSascha Sadewasser
dc.creatorJan Keller
dc.creatorTobias Törndahl
dc.creatorJennifer Cláudia Passos Teixeira
dc.creatorNicoleta Nicoara
dc.creatorRodrigo Ribeiro de Andrade
dc.creatorDaniel G. Stroppa
dc.creatorJuan Carlos González Pérez
dc.creatorMarika Edoff
dc.date.accessioned2024-03-12T13:24:49Z
dc.date.accessioned2025-09-08T23:24:45Z
dc.date.available2024-03-12T13:24:49Z
dc.date.issued2017
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1016/j.solmat.2016.09.023
dc.identifier.issn1879-3398
dc.identifier.urihttps://hdl.handle.net/1843/65686
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofSolar Energy Materials and Solar Cells
dc.rightsAcesso Restrito
dc.subjectFilmes finos
dc.subjectCélulas solares
dc.subject.otherThin film solar cells
dc.subject.otherBuffer layers
dc.titleCdS and Zn1−xSnxOy buffer layers for CIGS solar cells
dc.typeArtigo de periódico
local.citation.epage281
local.citation.spage272
local.citation.volume159
local.description.resumoThin film solar cells based on Cu(In,Ga)Se2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and ZnxSn1−xOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (Jsc) that compensate for lower values in fill factor (FF) and open circuit voltage (Voc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample.
local.identifier.orcidhttps://orcid.org/0000-0002-1050-2958
local.identifier.orcidhttps://orcid.org/0000-0001-8131-3313
local.identifier.orcidhttps://orcid.org/0000-0001-8384-6025
local.identifier.orcidhttps://orcid.org/0000-0002-3461-6036
local.identifier.orcidhttps://orcid.org/0000-0001-7757-5847
local.identifier.orcidhttps://orcid.org/0000-0002-3155-6832
local.identifier.orcidhttps://orcid.org/0000-0002-0909-4635
local.identifier.orcidhttps://orcid.org/0000-0002-7711-1839
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0003-4111-4613
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0927024816303646?via%3Dihub

Arquivos

Licença do pacote

Agora exibindo 1 - 1 de 1
Imagem de Miniatura
Nome:
License.txt
Tamanho:
1.99 KB
Formato:
Plain Text
Descrição:
Baixar

Coleções

Artigo de Periódico

Logo UFMG