Identification of rhenium donors and sulfur vacancy acceptors in layered MoS2 bulk samples

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dc.creatorF. D. Brandão
dc.creatorGeraldo Mathias Ribeiro
dc.creatorP. H. Vaz
dc.creatorJuan Carlos González Pérez
dc.creatorKlaus Wilhelm Heinrich Krambrock
dc.date.accessioned2024-02-21T12:13:58Z
dc.date.accessioned2025-09-09T01:28:29Z
dc.date.available2024-02-21T12:13:58Z
dc.date.issued2016
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1063/1.4954017
dc.identifier.issn1089-7550
dc.identifier.urihttps://hdl.handle.net/1843/64380
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofJournal of Applied Physics
dc.rightsAcesso Restrito
dc.subjectSemicondutores
dc.subjectMedidas elétricas
dc.subjectPropriedades ópticas
dc.subjectMetais de transição
dc.subjectEspectroscopia de ressonância paramagnética eletrônica
dc.subject.otherBand gap
dc.subject.otherSemiconductor devices
dc.subject.otherElectric measurements
dc.subject.otherCrystalline solids
dc.subject.otherOptical properties
dc.subject.otherIons and properties
dc.subject.otherTransition metals
dc.subject.otherChemical elements
dc.subject.otherElectron paramagnetic resonance spectroscopy
dc.titleIdentification of rhenium donors and sulfur vacancy acceptors in layered MoS2 bulk samples
dc.typeArtigo de periódico
local.citation.epage235701-8
local.citation.issue23
local.citation.spage235701-1
local.citation.volume119
local.description.resumoMoS2 monolayers, a two-dimensional (2D) direct semiconductor material with an energy gap of 1.9 eV, offer many opportunities to be explored in different electronic devices. Defects often play dominant roles in the electronic and optical properties of semiconductor devices. However, little experimental information about intrinsic and extrinsic defects or impurities is available for this 2D system, and even for macroscopic 3D samples for which MoS2 shows an indirect bandgap of 1.3 eV. In this work, we evaluate the nature of impurities with unpaired spins using electron paramagnetic resonance (EPR) in different geological macroscopic samples. Regarding the fact that monolayers are mostly obtained from natural crystals, we expect that the majority of impurities found in macroscopic samples are also randomly present in MoS2 monolayers. By EPR at low temperatures, rhenium donors and sulfur vacancy acceptors are identified as the main impurities in bulk MoS2 with a corresponding donor concentration of about 108–12 defects/cm2 for MoS2 monolayer. Electrical transport experiments as a function of temperature are in good agreement with the EPR results, revealing a shallow donor state with an ionization energy of 89 meV and a concentration of 7 × 1015 cm−3, which we attribute to rhenium, as well as a second deeper donor state with ionization energy of 241 meV with high concentration of 2 × 1019 cm−3 and net acceptor concentration of 5 × 1018 cm−3 related to sulfur vacancies.
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0002-7562-0285
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.aip.org/aip/jap/article/119/23/235701/142212/Identification-of-rhenium-donors-and-sulfur

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