Temperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide

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dc.creatorFrancisco Diasis Vieira de Araújo
dc.creatorAntonio Gomes de Souza Filho
dc.creatorRafael Silva Alencar
dc.creatorBartolomeu Cruz Viana Neto
dc.creatorVictor Viana Oliveira
dc.creatorAndreij de Carvalho Gadelha
dc.creatorThais C. V. Carvalho
dc.creatorThales Fernando Damasceno Fernandes
dc.creatorFrancisco Wellery Nunes Silva
dc.creatorRaphael Longuinhos Monteiro Lobato
dc.creatorJenaina Ribeiro Soares
dc.creatorAdo Jorio de Vasconcelos
dc.date.accessioned2022-09-06T19:01:55Z
dc.date.accessioned2025-09-08T23:31:52Z
dc.date.available2022-09-06T19:01:55Z
dc.date.issued2020-09-21
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.identifier.doihttps://doi.org/10.1088/1361-6528/abb107
dc.identifier.issn0957-4484
dc.identifier.urihttps://hdl.handle.net/1843/44980
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofNanotechnology
dc.rightsAcesso Restrito
dc.subjectSulfetos
dc.subjectGálio
dc.subjectEspectroscopia de Raman
dc.subject.otherPost-transition metal monochalcogenide
dc.subject.otherGallium sulfide
dc.subject.other2D materials
dc.subject.otherTemperature-dependent Raman spectroscopy
dc.subject.otherFew-layer GaS Grüneisen parameter
dc.titleTemperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide
dc.typeArtigo de periódico
local.citation.epage495702-8
local.citation.issue49
local.citation.spage495702-1
local.citation.volume31
local.description.resumoPhonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A11g and A2 1g Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. The Raman frequencies of these two phonons soften with increasing temperature with different θ = ∂ω/∂T temperature coefficients. The first-order temperature coefficients θ of A21g mode is ∼ -0.016 cm-1/K, independent of the number of layers and the support. In contrast, the θ of A1 1g mode is smaller for two-layer GaS and constant for thicker samples (∼ -0.006 2 cm-1 K-1). Furthermore, for two-layer GaS, the θ value is ∼ -0.004 4 cm-1 K-1 for the supported sample, while it is even smaller for the suspended one (∼ -0.002 9 cm-1K-1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.
local.identifier.orcidhttps://orcid.org/0000-0002-2257-3374
local.identifier.orcidhttps://orcid.org/0000-0002-9992-7564
local.identifier.orcidhttps://orcid.org/0000-0002-5207-4269
local.identifier.orcidhttps://orcid.org/0000-0003-2149-6335
local.identifier.orcidhttps://orcid.org/0000-0002-6350-7680
local.identifier.orcidhttps://orcid.org/0000-0003-3868-9029
local.identifier.orcidhttps://orcid.org/0000-0002-3241-3059
local.identifier.orcidhttps://orcid.org/0000-0003-1615-4672
local.identifier.orcidhttps://orcid.org/0000-0001-9248-2243
local.identifier.orcidhttps://orcid.org/0000-0002-5978-2735
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://iopscience.iop.org/article/10.1088/1361-6528/abb107

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